公开(公告)号：US20180366402A1

公开(公告)日：2018-12-20

申请号：US15625920

申请日：2017-06-16

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen Hung HUANG ,  Yan Wen CHUNG ,  Wei Chu SUN

IPC: H01L23/498 ,  H01L23/00

Abstract: The present disclosure relates to a wiring structure and a semiconductor package. The wiring structure comprises a first wiring pattern, a dielectric layer and a dummy structure. The first wiring pattern includes a conductive land having a width W1 and a surface area A, and a conductive trace having a width W2 and electrically connected to the conductive land, wherein ((W1*W2)/A)*100% about 25%. The dielectric layer covers the first wiring pattern, and the dummy structure is adjacent to the conductive trace.

公开(公告)号：US20210013163A1

公开(公告)日：2021-01-14

申请号：US16508219

申请日：2019-07-10

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen Hung HUANG ,  Yan Wen CHUNG ,  Wei Chu SUN

IPC: H01L23/66 ,  H01L23/498 ,  H01L23/00

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes an antenna zone and a routing zone. The routing zone is disposed on the antenna zone, where the antenna zone includes a first insulation layer and two or more second insulation layer and a thickness of the first insulation layer is different from that of the second insulation layer.

公开(公告)号：US20230011464A1

公开(公告)日：2023-01-12

申请号：US17944114

申请日：2022-09-13

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen Hung HUANG ,  Meng-Kai SHIH ,  Wei-Hong LAI ,  Wei Chu SUN

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/367 ,  H01L23/552 ,  H01L21/48 ,  H01L23/498 ,  H01L21/66

Abstract: A wiring structure includes an upper conductive structure, a lower conductive structure, an intermediate layer and at least one through via. The upper conductive structure includes at least one upper dielectric layer and at least one upper circuit layer in contact with the upper dielectric layer. The lower conductive structure includes at least one lower dielectric layer and at least one lower circuit layer in contact with the lower dielectric layer. The intermediate layer is disposed between the upper conductive structure and the lower conductive structure and bonds the upper conductive structure and the lower conductive structure together. The through via extends through the upper conductive structure, the intermediate layer and the lower conductive structure.

公开(公告)号：US20220005771A1

公开(公告)日：2022-01-06

申请号：US17480123

申请日：2021-09-20

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen Hung HUANG ,  Yan Wen CHUNG ,  Wei Chu SUN

IPC: H01L23/66 ,  H01L23/498 ,  H01L23/00

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes an antenna zone and a routing zone. The routing zone is disposed on the antenna zone, where the antenna zone includes a first insulation layer and two or more second insulation layer and a thickness of the first insulation layer is different from that of the second insulation layer.

公开(公告)号：US20250157947A1

公开(公告)日：2025-05-15

申请号：US19021138

申请日：2025-01-14

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen Hung HUANG ,  Meng-Kai SHIH ,  Wei-Hong LAI ,  Wei Chu SUN

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/66 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498 ,  H01L23/552

Abstract: A wiring structure includes an upper conductive structure, a lower conductive structure, an intermediate layer and at least one through via. The upper conductive structure includes at least one upper dielectric layer and at least one upper circuit layer in contact with the upper dielectric layer. The lower conductive structure includes at least one lower dielectric layer and at least one lower circuit layer in contact with the lower dielectric layer. The intermediate layer is disposed between the upper conductive structure and the lower conductive structure and bonds the upper conductive structure and the lower conductive structure together. The through via extends through the upper conductive structure, the intermediate layer and the lower conductive structure.

公开(公告)号：US20200279814A1

公开(公告)日：2020-09-03

申请号：US16289067

申请日：2019-02-28

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen Hung HUANG ,  Meng-Kai SHIH ,  Wei-Hong LAI ,  Wei Chu SUN

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/367 ,  H01L23/552 ,  H01L23/31 ,  H01L21/48 ,  H01L21/66

Abstract: A wiring structure includes an upper conductive structure, a lower conductive structure, an intermediate layer and at least one through via. The upper conductive structure includes at least one upper dielectric layer and at least one upper circuit layer in contact with the upper dielectric layer. The lower conductive structure includes at least one lower dielectric layer and at least one lower circuit layer in contact with the lower dielectric layer. The intermediate layer is disposed between the upper conductive structure and the lower conductive structure and bonds the upper conductive structure and the lower conductive structure together. The through via extends through the upper conductive structure, the intermediate layer and the lower conductive structure.