公开(公告)号：US20210104659A1

公开(公告)日：2021-04-08

申请号：US16072965

申请日：2017-01-19

Applicant: Agency for Science, Technology and Research

Inventor： Hideaki Fukuzawa ,  Jun Yu ,  Michael Han ,  Xinpeng Wang ,  Vladimir Bliznetsov

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: Various embodiments may provide a memory cell including a magnetic pinned layer with a substantially fixed magnetization direction, a crystalline spacer layer in contact with the magnetic pinned layer, and a magnetic storage layer. The magnetic storage layer may include an amorphous interface sub-layer in contact with the crystalline spacer layer, the amorphous interface sub-layer including a first alloy of iron (Fe) and at least one element. The amorphous storage layer may also include an amorphous enhancement sub-layer in contact with the amorphous interface sub-layer, the amorphous enhancement sub-layer including a second alloy of iron (Fe) and at least one element. The memory cell may additionally include a cap layer in contact with the amorphous enhancement sub-layer. A concentration of the at least one further element comprised in the first alloy and a concentration of the at least one further element comprised in the second alloy may be different.