公开(公告)号：USRE47767E1

公开(公告)日：2019-12-17

申请号：US14757799

申请日：2015-12-23

Applicant: Alcatel-Lucent

Inventor： Aref Chowdhury ,  Hock Ng ,  Richart Elliott Slusher

IPC: B82Y20/00 ,  H01L21/306 ,  G02B6/122 ,  H01J1/304 ,  H01J9/02 ,  H01J3/02 ,  B81B1/00 ,  H01L21/02

Abstract: A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.