公开(公告)号：US08193089B2

公开(公告)日：2012-06-05

申请号：US12502220

申请日：2009-07-13

申请人： Antoine Khoueir ,  Yongchul Ahn ,  Peter Nicholas Manos ,  Shuiyan Huang ,  Ivan Petrov Ivanov

发明人： Antoine Khoueir ,  Yongchul Ahn ,  Peter Nicholas Manos ,  Shuiyan Huang ,  Ivan Petrov Ivanov

IPC分类号： H01L21/4763

CPC分类号： H01L21/76846 ,  H01L21/76862

摘要： Various embodiments of the present invention are generally directed to a method of forming a conductive via plug in a semiconductor device. A first and second metal layer are electrically connected by a via plug that is formed by depositing a tungsten seed layer on a plurality of metal barrier layers within a recess using atomic layer deposition. The recess is then filled with tungsten using chemical vapor deposition.

摘要翻译： 本发明的各种实施例通常涉及在半导体器件中形成导电通孔的方法。 通过使用原子层沉积在凹部内的多个金属阻挡层上沉积钨晶种层而形成的通孔塞电连接第一和第二金属层。 然后使用化学气相沉积用凹槽填充钨。