公开(公告)号：US12027419B2

公开(公告)日：2024-07-02

申请号：US16912284

申请日：2020-06-25

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Ching-Fu Yeh ,  Yu-Chen Chan ,  Guanyu Luo ,  Meng-Pei Lu ,  Chao-Hsien Peng ,  Shin-Yi Yang ,  Ming-Han Lee ,  Andy Li

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76846 ,  H01L21/76802 ,  H01L21/76862 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238

摘要： A semiconductor device includes an interconnect structure embedded in a first metallization layer comprising a dielectric material. The interconnect structure includes a first metal material. The semiconductor device includes a first liner structure embedded in the first metallization layer. The first liner structure is extended along one or more boundaries of the interconnect structure in the first metallization layer. The first liner structure includes a second metal material reacted with one or more dopants, the second metal material being different from the first metal material.

公开(公告)号：US11854878B2

公开(公告)日：2023-12-26

申请号：US17066706

申请日：2020-10-09

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Huei-Wen Hsieh ,  Kai-Shiang Kuo ,  Cheng-Hui Weng ,  Chun-Sheng Chen ,  Wen-Hsuan Chen

IPC分类号： H01L25/065 ,  H01L25/00 ,  H01L21/768 ,  H01L23/00 ,  H01L23/532 ,  H01L23/31 ,  H01L23/528 ,  H01L23/522 ,  H01L27/088

CPC分类号： H01L21/76882 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76862 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53238 ,  H01L27/0886

摘要： A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

公开(公告)号：US20190115219A1

公开(公告)日：2019-04-18

申请号：US16159461

申请日：2018-10-12

申请人： Applied Materials, Inc.

发明人： Johanes S. SWENBERG ,  Wei LIU ,  Houda GRAOUI ,  Shashank SHARMA

IPC分类号： H01L21/28 ,  H01L29/45 ,  H01L21/285 ,  H01L21/02 ,  H01L21/321 ,  H01L21/324 ,  H01L29/40

CPC分类号： H01L21/28255 ,  H01L21/02186 ,  H01L21/0234 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/28575 ,  H01L21/3212 ,  H01L21/324 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76862 ,  H01L29/401 ,  H01L29/45 ,  H01L29/452

摘要： Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process is performed on a metal nitride layer in a film stack, thereby removing oxygen atoms disposed within layers of the film stack and, in some embodiments eliminating an oxygen-containing interfacial layer disposed within the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift. Further, the metal gate structure operates with an increased leakage current that is as little as one quarter the increase in leakage current associated with a similar metal gate structure formed via conventional techniques.

公开(公告)号：US20180358379A1

公开(公告)日：2018-12-13

申请号：US16108173

申请日：2018-08-22

申请人： Samsung Electronics Co., Ltd.

发明人： Hauk HAN ,  Je-Hyeon PARK ,  Kihyun YOON ,  Changwon LEE ,  HyunSeok LIM ,  Jooyeon HA

IPC分类号： H01L27/11582 ,  H01L23/535 ,  H01L27/1157

CPC分类号： H01L27/11582 ,  H01L21/76847 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53266 ,  H01L23/535 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

摘要： A semiconductor device includes a lower structure including a lower conductor, an upper structure having an opening exposing the lower conductor on the lower structure, and a connection structure filling the opening and connected to the lower conductor. The connection structure includes a first tungsten layer covering an inner surface of the opening and defining a recess region in the opening, and a second tungsten layer filling the recess region on the first tungsten layer. A grain size of the second tungsten layer in an upper portion of the connection structure is greater than a grain size of the second tungsten layer in a lower portion of the connection structure.

公开(公告)号：US20180315647A1

公开(公告)日：2018-11-01

申请号：US15583789

申请日：2017-05-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Sheng Wang ,  Chi-Cheng Hung ,  Ching-Hwanq Su ,  Liang-Yueh Ou Yang ,  Ming-Hsing Tsai ,  Yu-Ting Lin

IPC分类号： H01L21/768 ,  H01L21/288 ,  H01L29/66 ,  H01L23/532

CPC分类号： H01L21/76846 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/485 ,  H01L23/53266 ,  H01L29/66795

摘要： A method includes forming a first opening in a dielectric layer over a substrate, lining sidewalls and a bottom of the first opening with a conductive barrier layer, and depositing a seed layer over the conductive barrier layer. The method further includes treating the seed layer with a plasma process, and filling the first opening with a conductive material after the treating the seed layer.

公开(公告)号：US10079177B1

公开(公告)日：2018-09-18

申请号：US15694354

申请日：2017-09-01

申请人： United Microelectronics Corp.

发明人： Ko-Wei Lin ,  Ying-Lien Chen ,  Chun-Ling Lin ,  Huei-Ru Tsai ,  Hung-Miao Lin ,  Sheng-Yi Su ,  Tzu-Hao Liu

IPC分类号： H01L21/44 ,  H01L21/768 ,  H01L21/288

CPC分类号： H01L21/76873 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76862 ,  H01L23/53238

摘要： A method is provided for forming copper material over a substrate. The method includes forming a barrier layer over a substrate. Then, a depositing-soaking-treatment (DST) process is performed over the barrier layer. A copper layer is formed on the cobalt layer. The DST process includes depositing a cobalt layer on the barrier layer. Then, the cobalt layer is soaked with H2 gas at a first pressure. The cobalt layer is treated with a H2 plasma at a second pressure. The second pressure is lower than the first pressure.

公开(公告)号：US10079176B2

公开(公告)日：2018-09-18

申请号：US15212306

申请日：2016-07-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ya-Lien Lee

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/3213 ,  H01J37/32 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L21/76862 ,  H01J37/32422 ,  H01J37/32706 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/32136 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238

摘要： A barrier seed tool is configured to clean trenches in a first chamber, line the trenches with a diffusion barrier layer, and form a copper seed layer over the diffusion barrier layer in a second chamber. The clean chamber is configured to reduce overhangs in the copper seed layer by producing a plasma comprising positively and negatively charged ions including halogen ions, filtering the plasma to selectively exclude positively charged ions, and bombarding with the filtered plasma. The tool and related method can be used to reduce overhangs and improve subsequent gap fill while avoiding excessive damage to the dielectric matrix.

公开(公告)号：US20180254212A1

公开(公告)日：2018-09-06

申请号：US15970596

申请日：2018-05-03

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Bo-Jiun Lin ,  Hai-Ching Chen ,  Tien-I Bao

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/02

CPC分类号： H01L21/7685 ,  C23C18/1216 ,  C23C18/1254 ,  C23C18/1295 ,  C23C18/14 ,  C23C30/00 ,  C25D3/38 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/2885 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76862 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1015 ,  H01L2221/1021 ,  H01L2221/1073 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming an interconnect structure includes forming an insulating layer on a substrate. A damascene opening is formed through a thickness portion of the insulating layer. A diffusion barrier layer is formed to line the damascene opening. A conductive layer is formed overlying the diffusion barrier layer to fill the damascene opening. A carbon-containing metal oxide layer is formed on the conductive layer and the insulating layer.

公开(公告)号：US20180174899A1

公开(公告)日：2018-06-21

申请号：US15890568

申请日：2018-02-07

申请人： International Business Machines Corporation

发明人： Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Cornelius Brown Peethala ,  Michael Rizzolo ,  Chih-Chao Yang

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC分类号： H01L21/76862 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238

摘要： A semiconductor structure includes a dielectric layer having a trench formed therein and a barrier layer formed on a bottom and sidewalls of the trench, and on a top surface of the dielectric layer. The trench comprises a flared top gap opening and additional area at the bottom such that the top and bottom of the trench are wider than sidewalls of the trench. A thickness of the barrier layer on the bottom of the trench and on the top surface of the dielectric layer is controlled using one or more cycles comprising forming an oxidized layer using a neutral beam oxidation and removing the oxidized layer using an etching process, such that the thickness of the barrier layer on the bottom of the trench and on the top surface of the dielectric layer is substantially the same as the thickness of the barrier layer on sidewalls of the trench.

公开(公告)号：US09984923B2

公开(公告)日：2018-05-29

申请号：US15198516

申请日：2016-06-30

申请人： International Business Machines Corporation

发明人： Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Cornelius Brown Peethala ,  Michael Rizzolo ,  Chih-Chao Yang

IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76862 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238

摘要： A method of forming a semiconductor structure includes forming at least one trench in a dielectric layer, forming a barrier layer on a bottom of said at least one trench, sidewalls of said at least one trench and a top surface of the dielectric layer, the barrier layer having a non-uniform thickness, and selectively thinning at least a first portion of the barrier layer using one or more cycles comprising forming an oxidized layer in the first portion of the barrier layer using a neutral beam oxidation and removing the oxidized layer using an etching process.