公开(公告)号：US10354882B2

公开(公告)日：2019-07-16

申请号：US15963451

申请日：2018-04-26

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Xianmin Tang ,  Sundar Ramamurthy ,  Jerome Machillot

IPC: H01L21/285 ,  H01L21/324

Abstract: Methods for forming a metal silicide film with low resistivity at low temperature are described. A metal silicide film is formed on a substrate surface and annealed at high pressure and low temperature.

公开(公告)号：US20180315609A1

公开(公告)日：2018-11-01

申请号：US15963451

申请日：2018-04-26

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Xianmin Tang ,  Sundar Ramamurthy ,  Jerome Machillot

IPC: H01L21/285 ,  H01L21/324

CPC classification number: H01L21/28518 ,  H01L21/2855 ,  H01L21/324

Abstract: Methods for forming a metal silicide film with low resistivity at low temperature are described. A metal silicide film is formed on a substrate surface and annealed at high pressure and low temperature.