公开(公告)号：US20230052071A1

公开(公告)日：2023-02-16

申请号：US17980527

申请日：2022-11-03

Applicant: Applied Materials, Inc.

Inventor： James ROGERS ,  John POULOSE

IPC: H01J37/32

Abstract: Disclosed herein is an apparatus for processing a substrate using an inductively coupled plasma source. An inductively coupled plasma source utilizes a power source, a shield member, and a coil coupled to the power source. In certain embodiments, the coils are arranged with a horizontal spiral grouping and a vertical extending helical grouping. The shield member, according to certain embodiments, utilizes a grounding member to function as a Faraday shield. The embodiments herein reduce parasitic losses and instabilities in the plasma created by the inductively coupled plasma in the substrate processing system.

公开(公告)号：US20190108974A1

公开(公告)日：2019-04-11

申请号：US15727998

申请日：2017-10-09

Applicant: Applied Materials, Inc.

Inventor： James ROGERS ,  John POULOSE

IPC: H01J37/32

Abstract: Disclosed herein is an apparatus for processing a substrate using an inductively coupled plasma source. An inductively coupled plasma source utilizes a power source, a shield member, and a coil coupled to the power source. In certain embodiments, the coils are arranged with a horizontal spiral grouping and a vertical extending helical grouping. The shield member, according to certain embodiments, utilizes a grounding member to function as a Faraday shield. The embodiments herein reduce parasitic losses and instabilities in the plasma created by the inductively coupled plasma in the substrate processing system.

公开(公告)号：US20220270856A1

公开(公告)日：2022-08-25

申请号：US17183034

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： John POULOSE ,  Kartik RAMASWAMY

IPC: H01J37/32 ,  H03H7/38

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, an output configured to deliver the one or more RF signals to a processing chamber, a first variable capacitor disposed between the input and the output, a second variable capacitor disposed in parallel to the first variable capacitor, a third variable capacitor connected in parallel with each of the first variable capacitor and the second variable capacitor and in series with a transistor switch, and a controller configured to tune the matching network between a first frequency for high-power operation and a second frequency for low-power operation.

公开(公告)号：US20220270857A1

公开(公告)日：2022-08-25

申请号：US17183042

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： John POULOSE ,  Kartik RAMASWAMY

IPC: H01J37/32 ,  H03H7/38

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, an output configured to deliver the one or more RF signals to a processing chamber, a first variable capacitor disposed between the input and the output, a second variable capacitor disposed in parallel to the first variable capacitor, a MEMS array comprising a plurality of variable capacitors connected in series with the first variable capacitor, and a controller configured to tune the matching network between a first frequency for high-power operation and a second frequency for low-power operation.

公开(公告)号：US20190013186A1

公开(公告)日：2019-01-10

申请号：US15646072

申请日：2017-07-10

Applicant: Applied Materials, Inc.

Inventor： Anurag Kumar MISHRA ,  James ROGERS ,  John POULOSE

IPC: H01J37/32

Abstract: Apparatuses and methods are provided that, in some embodiments use an adjustable middle coil to tune plasma density in a plasma processing system. For example, in one embodiment, a plasma processing apparatus includes an impedance match circuit coupled to an Rf power source. The impedance match circuit measures voltage and current at an inner and an outer coil. The match circuit calculates plasma density from the measured voltage and/or current. An adjustable middle coil located between the inner and outer coils is adjusted and/or replaced to tune the plasma density radial profile.