公开(公告)号：US20200154556A1

公开(公告)日：2020-05-14

申请号：US16738697

申请日：2020-01-09

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Olivier LUERE ,  Rajinder DHINDSA ,  James ROGERS ,  Sunil SRINIVASAN ,  Anurag Kumar MISHRA

IPC: H05H1/46 ,  C23C14/54 ,  C23C14/34 ,  H01J37/34 ,  H01J37/08 ,  H01J37/32

Abstract: Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

公开(公告)号：US20200352017A1

公开(公告)日：2020-11-05

申请号：US16933311

申请日：2020-07-20

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Olivier LUERE ,  Rajinder DHINDSA ,  James ROGERS ,  Sunil SRINIVASAN ,  Anurag Kumar MISHRA

IPC: H05H1/46 ,  H01J37/34 ,  H01J37/32 ,  H01J37/08 ,  C23C14/34 ,  C23C14/54

Abstract: Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

公开(公告)号：US20200243303A1

公开(公告)日：2020-07-30

申请号：US16355153

申请日：2019-03-15

Applicant: Applied Materials, Inc.

Inventor： Anurag Kumar MISHRA ,  James ROGERS ,  Leonid DORF ,  Rajinder DHINDSA ,  Olivier LUERE

IPC: H01J37/32 ,  H01L21/683

Abstract: Embodiments described herein are applicable for use in all types of plasma assisted or plasma enhanced processing chambers and also for methods of plasma assisted or plasma enhanced processing of a substrate. More specifically, embodiments of this disclosure include a broadband filter assembly, also referred to herein as a filter assembly, that is configured to reduce and/or prevent RF leakage currents from being transferred from one or more RF driven components to a ground through other electrical components that are directly or indirectly electrically coupled to the RF driven components and ground with high input impedance (low current loss) making it compatible with shaped DC pulse bias applications.

公开(公告)号：US20190013186A1

公开(公告)日：2019-01-10

申请号：US15646072

申请日：2017-07-10

Applicant: Applied Materials, Inc.

Inventor： Anurag Kumar MISHRA ,  James ROGERS ,  John POULOSE

IPC: H01J37/32

Abstract: Apparatuses and methods are provided that, in some embodiments use an adjustable middle coil to tune plasma density in a plasma processing system. For example, in one embodiment, a plasma processing apparatus includes an impedance match circuit coupled to an Rf power source. The impedance match circuit measures voltage and current at an inner and an outer coil. The match circuit calculates plasma density from the measured voltage and/or current. An adjustable middle coil located between the inner and outer coils is adjusted and/or replaced to tune the plasma density radial profile.

公开(公告)号：US20190228952A1

公开(公告)日：2019-07-25

申请号：US16253655

申请日：2019-01-22

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Anurag Kumar MISHRA ,  Olivier LUERE ,  Rajinder DHINDSA ,  James ROGERS ,  Denis M. KOOSAU ,  Sunil SRINIVASAN

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065 ,  H01L21/67

Abstract: Embodiments of the present disclosure generally relate to methods and related process equipment for forming structures on substrates, such as etching high aspect ratio structures within one or more layers formed over a substrate. The methods and related equipment described herein can improve the formation of the structures on substrates by controlling the curvature of the plasma-sheath boundary near the periphery of the substrate, for example, by generating a substantially flat plasma-sheath boundary over the entire substrate (i.e., center to edge). The methods and related equipment described below can provide control over the curvature of the plasma-sheath boundary, including generation of the flat plasma-sheath boundary by applying RF power to an edge ring surrounding the substrate using a separate and independent RF power source.