公开(公告)号：US20230219189A1

公开(公告)日：2023-07-13

申请号：US17571336

申请日：2022-01-07

Applicant: Applied Materials, Inc.

Inventor： Ashwin CHOCKALINGAM ,  Joshua CHEN ,  Shiyan Akalanka Jayanath WEWALA GONNAGAHADENIYAGE ,  Daniel REDFIELD

IPC: B24B37/12 ,  B24B37/34

CPC classification number: B24B37/12 ,  B24B37/34

Abstract: Apparatus and methods for correcting asymmetry in a thickness profile by use of a Chemical Mechanical Planarization (CMP) process. In one embodiment, a CMP system includes a polishing pad, an adhesion layer, and a platen. The polishing pad includes has a polishing surface, a second surface that is positioned opposite to the polishing surface in a first direction, and a plurality of cavities formed in the second surface. The platen includes a body that comprises a pad supporting surface and one or more ports formed in the body, configured to receive a positive or negative pressure that is generated from a fluid control device. Each of the plurality of cavities is in fluid communication with at least one of the one or more ports and the adhesion layer is disposed between the pad supporting surface of the platen and a portion of the second surface of the polishing pad.