公开(公告)号：US20240332027A1

公开(公告)日：2024-10-03

申请号：US18128036

申请日：2023-03-29

Applicant: Applied Materials, Inc.

Inventor： Anchuan Wang ,  Jiayin Huang ,  Kalpana Suen

IPC: H01L21/3065

CPC classification number: H01L21/3065

Abstract: Exemplary methods of semiconductor processing may include providing a first fluorine-containing precursor to a remote plasma system of a semiconductor processing chamber. The methods may include generating plasma effluents of the first fluorine-containing precursor in the remote plasma system. The methods may include providing plasma effluents of the first fluorine-containing precursor to a processing region of the semiconductor processing chamber. The methods may include providing a second fluorine-containing precursor to the processing region of the semiconductor processing chamber. A substrate including alternating layers of material may be disposed within the processing region. The alternating layers of material may include a silicon-and-germanium-containing material. The methods may include contacting the substrate with the plasma effluents of the first fluorine-containing precursor and with the second fluorine-containing precursor. The methods may include etching the silicon-and-germanium-containing material of the alternating layers of material on the substrate.