公开(公告)号：US20200075321A1

公开(公告)日：2020-03-05

申请号：US16552294

申请日：2019-08-27

Applicant: Applied Materials, Inc.

Inventor： Shaunak MUKHERJEE ,  Bo XIE ,  Kevin Michael CHO ,  Kang Sub YIM ,  Deenesh PADHI ,  Astha GARG

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/50

Abstract: Embodiments described herein provide a method of forming a low-k carbon-doped silicon oxide (CDO) layer having a high hardness by a plasma-enhanced chemical vapor deposition (PECVD) process. The method includes providing a carrier gas at a carrier gas flow rate and a CDO precursor at a precursor flow rate to a process chamber. A radio frequency (RF) power is applied at a power level and a frequency to the CDO precursor. The CDO layer is deposited on a substrate within the process chamber.