公开(公告)号：US12158605B2

公开(公告)日：2024-12-03

申请号：US18662859

申请日：2024-05-13

Applicant: Applied Materials, Inc.

Inventor： Levent Colak ,  Ludovic Godet ,  Andre P. Labonte

IPC: F21V8/00

Abstract: Embodiments described herein provide for methods of forming optical device structures. The methods utilize rotation of a substrate, to have the optical device structures formed thereon, and tunability of etch rates of a patterned resist disposed over the substrate and one of a device layer or the substrate to form the optical device structures without multiple lithographic patterning steps and angled etch steps.

公开(公告)号：US12013566B2

公开(公告)日：2024-06-18

申请号：US17958504

申请日：2022-10-03

Applicant: Applied Materials, Inc.

Inventor： Levent Colak ,  Ludovic Godet ,  Andre P. Labonte

IPC: F21V8/00

CPC classification number: G02B6/0065 ,  G02B6/0016 ,  G02B6/0038

Abstract: Embodiments described herein provide for methods of forming optical device structures. The methods utilize rotation of a substrate, to have the optical device structures formed thereon, and tunability of etch rates of a patterned resist disposed over the substrate and one of a device layer or the substrate to form the optical device structures without multiple lithographic patterning steps and angled etch steps.

公开(公告)号：US11487058B2

公开(公告)日：2022-11-01

申请号：US16993067

申请日：2020-08-13

Applicant: Applied Materials, Inc.

Inventor： Levent Colak ,  Ludovic Godet ,  Andre P. Labonte

IPC: F21V8/00

Abstract: Embodiments described herein provide for methods of forming optical device structures. The methods utilize rotation of a substrate, to have the optical device structures formed thereon, and tunability of etch rates of a patterned resist disposed over the substrate and one of a device layer or the substrate to form the optical device structures without multiple lithographic patterning steps and angled etch steps.