公开(公告)号：US12159804B2

公开(公告)日：2024-12-03

申请号：US17654077

申请日：2022-03-09

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Kai Wu ,  Dixiong Wang ,  Yi Luo

IPC: H01L21/768 ,  C23C16/14 ,  H01L23/532 ,  H01L21/285

Abstract: A structure is provided including a substrate and a tungsten-containing layer. The tungsten-containing layer includes a nucleation layer disposed on the substrate and a bulk layer is disposed over the nucleation layer. The nucleation layer includes tungsten and the bulk layer includes about 0.1% to about 20% atomic molybdenum. The tungsten-containing layer includes a film stress of about 350 MPa to about 450 MPa.

公开(公告)号：US20220223472A1

公开(公告)日：2022-07-14

申请号：US17145520

申请日：2021-01-11

Applicant: Applied Materials, Inc.

Inventor： Yi Luo ,  Rong Tao ,  Liqi Wu ,  Mingte Liu ,  Joung Joo Lee ,  Avgerinos V. Gelatos

IPC: H01L21/768

Abstract: A method for forming conductive structures for a semiconductor device includes depositing a reflow material in features, e.g. vias, formed in a dielectric layer. A high melting point material is deposited in the feature and is reflowed and annealed in an ambient comprising one or more of hydrogen molecules, hydrogen ions, and hydrogen radicals at a temperature greater than 300° C. to fill the feature with a reflow material.