公开(公告)号：US10541169B2

公开(公告)日：2020-01-21

申请号：US15593502

申请日：2017-05-12

Applicant: Applied Materials, Inc.

Inventor： Chong Jiang ,  Lei Jing ,  Mingte Liu ,  Adolph Miller Allen ,  Michael W. Johnson ,  Pallavi Zhang ,  Michael D. Armacost

IPC: H01L21/683

Abstract: Embodiments of the disclosure relate to methods and a system for adjusting the chucking voltage of an electrostatic chuck. In one embodiment, a system for plasma processing a substrate includes a plasma processing chamber, a radio-frequency (RF) matching circuit coupled to the chamber, a sensor and a controller. The chamber includes a chamber body having an inner volume, a bipolar electrostatic chuck disposed in the inner volume and a power supply configured to provide chucking voltage to a pair of electrodes embedded within the electrostatic chuck. When plasma is energized within the chamber by the application of RF power through an RF matching circuit, the sensor is configured to detect a change in an electrical characteristic at the RF matching circuit. The controller is coupled to the power supply and configured to adjust the chucking voltage in response to the change in the electrical characteristic detected by the sensor.

公开(公告)号：US20220223472A1

公开(公告)日：2022-07-14

申请号：US17145520

申请日：2021-01-11

Applicant: Applied Materials, Inc.

Inventor： Yi Luo ,  Rong Tao ,  Liqi Wu ,  Mingte Liu ,  Joung Joo Lee ,  Avgerinos V. Gelatos

IPC: H01L21/768

Abstract: A method for forming conductive structures for a semiconductor device includes depositing a reflow material in features, e.g. vias, formed in a dielectric layer. A high melting point material is deposited in the feature and is reflowed and annealed in an ambient comprising one or more of hydrogen molecules, hydrogen ions, and hydrogen radicals at a temperature greater than 300° C. to fill the feature with a reflow material.