公开(公告)号：US20240105522A1

公开(公告)日：2024-03-28

申请号：US17947972

申请日：2022-09-19

Applicant: Applied Materials Israel Ltd.

Inventor： Tomer Haim PELED ,  Bar DUBOVSKI ,  Noam TAL ,  Bobin Mathew SKARIA ,  Boris LEVANT ,  Tal FRANK

IPC: H01L21/66 ,  G06K9/62 ,  G06N20/00

CPC classification number: H01L22/12 ,  G06K9/6256 ,  G06N20/00

Abstract: There is provided a system and method for examining a semiconductor specimen. The method includes obtaining a runtime image of the specimen, and providing the runtime image as an input to an end-to-end (E2E) learning model to process, thereby obtaining, as an output of the E2E learning model, runtime measurement data specific for a metrology application. The E2E learning model is previously trained for the metrology application using a training set comprising a plurality of training images of the specimen and respective ground truth measurement data associated therewith, and one or more cost functions specifically configured to evaluate, for the plurality of training images and corresponding training measurement data outputted by the E2E learning model, one or more metrology benchmarks from a group comprising precision, correlation, and matching.

公开(公告)号：US20240193756A1

公开(公告)日：2024-06-13

申请号：US18537693

申请日：2023-12-12

Applicant: Applied Materials Israel Ltd.

Inventor： Lior AKERMAN ,  Tomer Haim PELED

IPC: G06T7/00 ,  G06T7/11

CPC classification number: G06T7/0006 ,  G06T7/11 ,  G06T2207/10061 ,  G06T2207/20081 ,  G06T2207/30148

Abstract: There is provided a method and a system in which a processing circuitry is configured to obtain an inspection image representative of 2D information of an inspection area of a semiconductor specimen, and feed the inspection image to a trained machine learning model operative to segment the inspection image into at least a first segment S′1 and a second segment S′2, wherein the first segment S′1 corresponds to a first region of the inspection area which has a height profile pattern corresponding to a first height profile pattern, and the second segment S′2 corresponds to a second region of the area which has a height profile pattern corresponding to a second height profile pattern, wherein the first height profile pattern is different from the second height profile pattern.