RF frequency tuning in silicon photoconductive-switch-based high power microwave systems

    公开(公告)号:US11243418B2

    公开(公告)日:2022-02-08

    申请号:US16542676

    申请日:2019-08-16

    Inventor: John E. McGeehan

    Abstract: An RF frequency tuning-in-silicon photoconductive-switch-based high power microwave system including a cradle; a transmission line proximate the cradle; a photosensitive silicon material switch component also proximate the cradle; a laser light source having a varied illumination incidence location on the photosensitive material; and a laser alignment component providing the location of the illumination incidence location on the photosensitive material; whereby the inductance of the switch varies as a function of the incidence location of the illumination on the photosensitive material.

    RF FREQUENCY TUNING IN SILICON PHOTOCONDUCTIVE-SWITCH-BASED HIGH POWER MICROWAVE SYSTEMS

    公开(公告)号:US20210048694A1

    公开(公告)日:2021-02-18

    申请号:US16542676

    申请日:2019-08-16

    Inventor: John E. McGeehan

    Abstract: An RF frequency tuning-in-silicon photoconductive-switch-based high power microwave system including a cradle; a transmission line proximate the cradle; a photosensitive silicon material switch component also proximate the cradle; a laser light source having a varied illumination incidence location on the photosensitive material; and a laser alignment component providing the location of the illumination incidence location on the photosensitive material; whereby the inductance of the switch varies as a function of the incidence location of the illumination on the photosensitive material.

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