Mask structure for X-ray lithography
    1.
    发明授权
    Mask structure for X-ray lithography 失效
    X射线光刻的掩模结构

    公开(公告)号:US3892973A

    公开(公告)日:1975-07-01

    申请号:US44292174

    申请日:1974-02-15

    CPC classification number: G03F1/22 G03F1/48

    Abstract: A mask structure for use in an x-ray lithographic system comprises as the substrate thereof a Mylar film stretched over and bonded to a support ring. The stretched Mylar film exhibits an attractive combination of advantageous properties such as high planarity, dimensional stability, mechanical strength, low x-ray absorption, resistance to organic solvents, optical transparency, and ready availability in a variety of thicknesses with optical quality surfaces.

    Abstract translation: 用于x射线平版印刷系统的掩模结构包括作为其基底的Mylar膜,其被拉伸并粘合到支撑环上。 拉伸的Mylar薄膜表现出有利的性质,例如高平坦度,尺寸稳定性,机械强度,低x射线吸收,耐有机溶剂的耐受性,光学透明度以及具有光学质量表面的各种厚度的即用可用性的有吸引力的组合。

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