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公开(公告)号:US11428614B2
公开(公告)日:2022-08-30
申请号:US16912934
申请日:2020-06-26
Applicant: Bell Textron Inc.
Inventor: Xiaoming Li , Bogdan R. Krasnowski , Robert A. Figueroa , Robert Wardlaw
IPC: G01N3/62 , G01N3/02 , G06F30/15 , G06F119/18
Abstract: A notch treatment method for flaw simulation including providing the specimen with the notch, the notch having a re-melt material layer; isolating the notch; and selectively etching the notch to provide an etched surface of the notch; wherein at least a portion of the re-melt material layer has been removed from the notch. In one aspect, there is provided a notch treatment method for flaw simulation including providing the specimen with the notch, the notch having a re-melt material layer, the specimen includes steel or an alloy thereof; isolating the notch; and selectively etching the notch with a first etching solution and a second etching solution to provide an etched surface on the notch; wherein at least a portion of the re-melt material layer has been removed from the notch.
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公开(公告)号:US20200333228A1
公开(公告)日:2020-10-22
申请号:US16912934
申请日:2020-06-26
Applicant: Bell Textron Inc.
Inventor: Xiaoming Li , Bogdan R. Krasnowski , Robert A. Figueroa , Robert Wardlaw
Abstract: A notch treatment method for flaw simulation including providing the specimen with the notch, the notch having a re-melt material layer; isolating the notch; and selectively etching the notch to provide an etched surface of the notch; wherein at least a portion of the re-melt material layer has been removed from the notch. In one aspect, there is provided a notch treatment method for flaw simulation including providing the specimen with the notch, the notch having a re-melt material layer, the specimen includes steel or an alloy thereof; isolating the notch; and selectively etching the notch with a first etching solution and a second etching solution to provide an etched surface on the notch; wherein at least a portion of the re-melt material layer has been removed from the notch.
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