公开(公告)号：US10305014B2

公开(公告)日：2019-05-28

申请号：US14924596

申请日：2015-10-27

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Akram Boukai ,  Yuri Bunimovich ,  William A. Goddard ,  James R. Heath ,  Jamil Tahir-Kheli

IPC: H01L35/26 ,  H01L35/32 ,  H01L35/34

Abstract: Methods and devices for controlling thermal conductivity and thermoelectric power of semiconductor nanowires are described. The thermal conductivity and the thermoelectric power are controlled substantially independently of the electrical conductivity of the nanowires by controlling dimensions and doping, respectively, of the nanowires. A thermoelectric device comprising p-doped and n-doped semiconductor nanowire thermocouples is also shown, together with a method to fabricate alternately p-doped and n-doped arrays of silicon nanowires.