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公开(公告)号:US20230120260A1
公开(公告)日:2023-04-20
申请号:US18077987
申请日:2022-12-08
发明人: Lon Bell , Douglas Crane
摘要: Provided herein is a thermoelectric element that includes a cold end, a hot end, and a p-type or n-type material having a length between the hot end and the cold end. The p-type or n-type material has an intrinsic Seebeck coefficient (S), an electrical resistivity (ρ), and a thermal conductivity (λ). Each of two or more of S, ρ, and λ generally increases along the length from the cold end to the hot end. The thermoelectric element may be provided in single-stage thermoelectric devices providing enhanced maximum temperature differences. The single-stage thermoelectric devices maybe combined with one another to provide multi-stage thermoelectric devices with even further enhanced maximum temperature differences.
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公开(公告)号:US11532613B2
公开(公告)日:2022-12-20
申请号:US17163960
申请日:2021-02-01
发明人: Hui-Yu Lee , Chi-Wen Chang , Jui-Feng Kuan , Yi-Kan Cheng
IPC分类号: H01L23/34 , H01L23/38 , H01L27/06 , H01L23/00 , H01L25/065 , H01L35/26 , H01L35/18 , H01L23/48
摘要: A structure and method for cooling a three-dimensional integrated circuit (3DIC) are provided. A cooling element is configured for thermal connection to the 3DIC. The cooling element includes a plurality of individually controllable cooling modules disposed at a first plurality of locations relative to the 3DIC. Each of the cooling modules includes a cold pole and a heat sink. The cold pole is configured to absorb heat from the 3DIC. The heat sink is configured to dissipate the heat absorbed by the cold pole and is coupled to the cold pole via an N-type semiconductor element and via a P-type semiconductor element. A temperature sensing element includes a plurality of thermal monitoring elements disposed at a second plurality of locations relative to the 3DIC for measuring temperatures at the second plurality of locations. The measured temperatures control the plurality of cooling modules.
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公开(公告)号:US11508893B2
公开(公告)日:2022-11-22
申请号:US16612466
申请日:2018-05-17
发明人: Naoki Sadayori
IPC分类号: H01L35/18 , H01L35/22 , H01L35/34 , H01L35/26 , H01L35/24 , H01L35/28 , C01B33/06 , B28B11/24 , B22F3/10 , B22F3/105 , B82Y30/00
摘要: A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises silicon or a silicon alloy, and the average grain size of the crystal grains constituting the polycrystalline body is 1 μm or less, and the electrical conductivity is 10,000 S/m or higher.
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公开(公告)号:US11342490B2
公开(公告)日:2022-05-24
申请号:US16998412
申请日:2020-08-20
申请人: LG INNOTEK CO., LTD.
发明人: Tsuyoshi Tosho
IPC分类号: H01L35/16 , H01L35/32 , H01L35/34 , H01L35/18 , H01L35/26 , H01L35/12 , H01L35/02 , H01L35/10
摘要: A method may be provided of manufacturing a thermoelectric leg. The method may include preparing a first metal substrate including a first metal, and forming a first plated layer including a second metal on the first metal substrate. The method may also include disposing a layer including tellurium (Te) on the first plated layer, and forming a portion of the first plated layer as a first bonding layer by reacting the second metal and the Te. The method also includes disposing a thermoelectric material layer including bismuth (Bi) and Te on an upper surface of the first bonding layer, and disposing a second metal substrate, on which a second bonding layer and a second plated layer are formed, on the thermoelectric material layer, and sintering.
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公开(公告)号:US20210343948A1
公开(公告)日:2021-11-04
申请号:US17012137
申请日:2020-09-04
发明人: Letian Dou , Yao Gao , Enzheng Shi
摘要: The present disclosure relates to novel two-dimensional halide perovskite materials, and the method of making and using the two-dimensional halide perovskite materials.
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公开(公告)号:US20210265550A1
公开(公告)日:2021-08-26
申请号:US16973194
申请日:2019-03-26
摘要: A thermoelectric conversion material is composed of a compound semiconductor including a plurality of base material elements, and includes: an amorphous phase; and crystal phases having an average grain size of more than or equal to 5 nm, each of the crystal phases being in a form of a grain. The plurality of base material elements include a specific base material element that causes an increase of a band gap by increasing a concentration of the specific base material element. An atomic concentration of the specific base material element included in the crystal phases with respect to a whole of the plurality of base material elements included in the crystal phases is higher than an atomic concentration of the specific base material element included in the compound semiconductor with respect to a whole of the plurality of base material elements included in the compound semiconductor.
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公开(公告)号:US20210159225A1
公开(公告)日:2021-05-27
申请号:US17163960
申请日:2021-02-01
发明人: Hui-Yu Lee , Chi-Wen Chang , Jui-Feng Kuan , Yi-Kan Cheng
摘要: A structure and method for cooling a three-dimensional integrated circuit (3DIC) are provided. A cooling element is configured for thermal connection to the 3DIC. The cooling element includes a plurality of individually controllable cooling modules disposed at a first plurality of locations relative to the 3DIC. Each of the cooling modules includes a cold pole and a heat sink. The cold pole is configured to absorb heat from the 3DIC. The heat sink is configured to dissipate the heat absorbed by the cold pole and is coupled to the cold pole via an N-type semiconductor element and via a P-type semiconductor element. A temperature sensing element includes a plurality of thermal monitoring elements disposed at a second plurality of locations relative to the 3DIC for measuring temperatures at the second plurality of locations. The measured temperatures control the plurality of cooling modules.
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公开(公告)号:US10950775B2
公开(公告)日:2021-03-16
申请号:US16491339
申请日:2018-03-09
申请人: Gerold Kotman , Niklas Kotman , Riccardo Raccis
发明人: Riccardo Raccis
IPC分类号: H01L35/24 , C08K3/04 , C08K3/08 , C08L9/00 , C08L33/08 , H01L35/20 , H01L35/22 , H01L35/26 , H01L37/00
摘要: The present invention provides a conversion material including a first phase providing a matrix and a second phase comprising a nanoscale or microscale material providing electron mobility. The conversion material converts heat from a single macroscopic reservoir into voltage.
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公开(公告)号:US20210074900A1
公开(公告)日:2021-03-11
申请号:US16820161
申请日:2020-03-16
发明人: Huijun KANG , Tongmin WANG , Xiong YANG , Enyu GUO , Zongning CHEN , Tingju LI , Zhiqiang CAO , Yiping LU , Jinchuan JIE , Yubo ZHANG
摘要: The invention relates to a process for manufacturing a ZrNiSn-based half-Heusler thermoelectric material and regulating antisite defects therein, including the steps of: mixing zirconium (Zr), nickel (Ni), and stannum (Sn) at an atomic ratio of Zr: Ni: Sn=1:1:1; forming an ingot by melting the mixture in a levitation melting furnace; milling the ingot to form a milled powder followed by drying; sintering the dried powder by spark plasma sintering; and placing the sintered powder in a vacuum vessel to be subjected to heat treatment and then quenching treatment to obtain the ZrNiSn-based half-Heusler thermoelectric material. The process is simple, easy to control, and results in a single phase ZrNiSn-based half-Heusler thermoelectric material with antisite defects.
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公开(公告)号:US20200303612A1
公开(公告)日:2020-09-24
申请号:US16084057
申请日:2017-03-17
发明人: Yoshinobu Nakada , Koya Arai , Masahito Komasaki
摘要: A magnesium-based thermoelectric conversion material includes a first layer formed of Mg2Si and a second layer formed of Mg2SixSn1-x (here, x is equal to or greater than 0 and less than 1), in which the first layer and the second layer are directly joined to each other, and within a junction surface with the first layer and in the vicinity of the junction surface, the second layer has a tin concentration transition region in which a tin concentration increases as a distance from the junction surface increases. The junction layer is regarded as a site in which a tin concentration is found to be equal to or lower than a detection limit by the measurement performed using EDX.
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