MEMS RF-switch with near-zero impact landing

    公开(公告)号:US11417487B2

    公开(公告)日:2022-08-16

    申请号:US16343912

    申请日:2017-09-14

    IPC分类号: H01H59/00 H01H1/00

    摘要: The present disclosure generally relates to the design of a MEMS ohmic switch which provides for a low-impact landing of the MEMS device movable plate on the RF contact and a high restoring force for breaking the contacts to improve the lifetime of the switch. The switch has at least one contact electrode disposed off-center of the switch device and also has a secondary landing post disposed near the center of the switch device. The secondary landing post extends to a greater height above the substrate as compared to the RF contact of the contact electrode so that the movable plate contacts the secondary landing post first and then gently lands on the RF contact. Upon release, the movable plate will disengage from the RF contact prior to disengaging from the secondary landing post and have a longer lifetime due to the high restoring force.