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公开(公告)号：US11538718B2
公开(公告)日：2022-12-27
申请号：US16956278
申请日：2018-12-17
发明人： Mikaël Colin , Audrey Berthelot
IPC分类号： H01L21/78 , B23K26/53 , H01L21/027 , B23K101/40
摘要： Process for producing semiconductor devices in a substrate, comprising: photolithography of a pattern of a reticle onto a portion of the substrate, defining first elements of the semiconductor devices, an exposure of the pattern being repeated a plurality of times in order to define all of the devices, photolithography of a pattern of an etch mask over all of the substrate, etching photolithography patterns into one portion of the thickness of the substrate, wherein first dicing lanes encircling the devices are included in the pattern of the etch mask and/or of the reticle, and the photolithography of the etch mask defines second dicing lanes defined by predetermined fracture lines of the edges of the substrate, and furthermore comprising the implementation of a step of irradiating the substrate with a laser beam through the first and second dicing lanes.
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公开(公告)号：US11312618B2
公开(公告)日：2022-04-26
申请号：US16492345
申请日：2018-03-14
发明人： Audrey Berthelot , Mikaël Colin , Alain Jeanroy , Guillaume Lehee , Olivier Vancauwenberghe , Philippe Onfroy , Jean-Sébastien Mace
摘要： A microdevice (100) comprising a movable element (111) capable of moving relative to a fixed part (115), produced in first and second layers of material (104, 106) arranged one above the other such that the movable element comprises a portion (112) of the first layer and a portion (118) of the second layer secured to each other, and wherein the movable element is suspended from the fixed part by a suspension structure (121) formed in the first and/or second layer of material.
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