公开(公告)号：US20170121175A1

公开(公告)日：2017-05-04

申请号：US15405603

申请日：2017-01-13

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Dan DAI ,  Xinwei ZHANG ,  Guoping ZHOU ,  Changfeng XIA

IPC: B81C1/00

CPC classification number: B81C1/00825 ,  B81B7/0029 ,  B81C1/0038 ,  B81C2201/0167 ,  B81C2201/053

Abstract: A method of manufacturing a MEMS chip includes: providing a silicon substrate layer, the silicon substrate layer comprising a front surface configured to perform a MEMS process and a rear surface opposite to the front surface; growing a first oxidation layer mainly made of SiO2 on the rear surface of the silicon substrate layer by performing a thermal oxidation process; and depositing a first thin film layer mainly made of silicon nitride on the first oxidation layer by performing a low pressure chemical vapor deposition process.