公开(公告)号：US20170121175A1

公开(公告)日：2017-05-04

申请号：US15405603

申请日：2017-01-13

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Dan DAI ,  Xinwei ZHANG ,  Guoping ZHOU ,  Changfeng XIA

IPC: B81C1/00

CPC classification number: B81C1/00825 ,  B81B7/0029 ,  B81C1/0038 ,  B81C2201/0167 ,  B81C2201/053

Abstract: A method of manufacturing a MEMS chip includes: providing a silicon substrate layer, the silicon substrate layer comprising a front surface configured to perform a MEMS process and a rear surface opposite to the front surface; growing a first oxidation layer mainly made of SiO2 on the rear surface of the silicon substrate layer by performing a thermal oxidation process; and depositing a first thin film layer mainly made of silicon nitride on the first oxidation layer by performing a low pressure chemical vapor deposition process.

公开(公告)号：US20170073224A1

公开(公告)日：2017-03-16

申请号：US15312146

申请日：2015-05-05

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Yonggang HU ,  Guoping ZHOU

IPC: B81C1/00

CPC classification number: B81C1/00619 ,  B81C1/00 ,  B81C2201/0133 ,  B81C2201/0142

Abstract: An MEMS-based method for manufacturing a sensor comprises the steps of: forming a shallow channel (120) and a support beam (140) on a front surface of a substrate (100); forming a first epitaxial layer (200) on the front surface of the substrate (100) to seal the shallow channel (120); forming a suspended mesh structure (160) below the first epitaxial layer (200); and forming a deep channel (180) at a position on a back surface of the substrate (100) corresponding to the shallow channel (120), so that the shallow channel (120) is in communication with the deep channel (180). In the Method of manufacturing a MEMS-based sensor, when a shallow channel is formed on a front surface, a support beam of a mass block is formed, so the etching of a channel is easier to control, the process is snore precise. and the uniformity and the homogeneity of the formed support beam are better.

Abstract translation: 用于制造传感器的基于MEMS的方法包括以下步骤：在衬底（100）的前表面上形成浅沟道（120）和支撑梁（140）; 在所述衬底（100）的前表面上形成第一外延层（200）以密封所述浅沟道（120）; 在所述第一外延层（200）下方形成悬浮网状结构（160）; 以及在与所述浅通道（120）相对应的所述基板（100）的背表面上的位置处形成深通道（180），使得所述浅通道（120）与所述深通道（180）连通。 在制造基于MEMS的传感器的方法中，当在前表面上形成浅沟道时，形成质量块的支撑梁，因此通道的蚀刻更易于控制，工艺打鼾精确。 形成的支撑梁的均匀性和均匀性更好。