公开(公告)号：US20200258782A1

公开(公告)日：2020-08-13

申请号：US16643170

申请日：2018-08-31

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Lihui GU ,  Sen ZHANG ,  Congming QI

IPC: H01L21/8249 ,  H01L29/739 ,  H01L29/78 ,  H01L27/06

Abstract: An integrated circuit chip and a manufacturing method therefor, and a gate drive circuit, the integrated circuit chip comprising: a semiconductor substrate (103), a high voltage island (101a) being formed in the semiconductor substrate (103); a high voltage junction terminal (102a), the high voltage junction terminal (102a) surrounding the high voltage island (101a), a depletion type MOS device (N1) being formed on the high voltage junction terminal (102a), a gate electrode and a drain electrode of the depletion type MOS device (N1) being short connected, and a source electrode of the depletion type MOS device (N1) being connected to a high side power supply end (VB) of the integrated circuit chip; and a bipolar transistor (Q1), a collector electrode of the bipolar transistor (Q1) being short connected to the substrate and being connected to a low side power supply end (VCC) of the integrated circuit chip, an emitter of the bipolar transistor (Q1) being connected to a gate electrode of the depletion type MOS device (N1).