公开(公告)号：US20200216307A1

公开(公告)日：2020-07-09

申请号：US16628001

申请日：2018-07-03

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Dan Dai ,  Changfeng Xia ,  Juanjuan Dong

IPC: B81C1/00 ,  B81B1/00

Abstract: A method for manufacturing a dual-cavity structure and a dual-cavity structure, including: etching on a semiconductor substrate to form a first trench array, tops of the first trench array being separated from each other and bottoms thereof being communicated with each other to form a first cavity; growing a first epitaxial layer on the semiconductor substrate on which the first trench array is formed, to cover the first trench array by the first epitaxial layer; etching on the first epitaxial layer to form a second trench array; tops of the second trench array being separated from each other and bottoms thereof being communicated with each other to form a second cavity; growing a second epitaxial layer on the first epitaxial layer on which the second trench array is formed; and etching the first epitaxial layer and the second epitaxial layer to form a straight groove.