公开(公告)号：US10093536B2

公开(公告)日：2018-10-09

申请号：US15573280

申请日：2016-05-10

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Errong Jing

IPC: G01J5/00 ,  B81C1/00 ,  B81B7/02 ,  G01J5/20

Abstract: An MEMS double-layer suspension microstructure manufacturing method, comprising: providing a substrate; forming a first dielectric layer on the substrate; patterning the first dielectric layer to prepare a first film body and a cantilever beam connected to the first film body; forming a sacrificial layer on the first dielectric layer; patterning the sacrificial layer located on the first film body to make a recess portioned portion for forming a support structure, with the first film body being exposed at the bottom of the recess portioned portion; forming a second dielectric layer on the sacrificial layer; patterning the second dielectric layer to make the second film body and the support structure, with the support structure being connected to the first film body and the second film body; and removing part of the substrate under the first film body and removing the sacrificial layer to obtain the MEMS double-layer suspension microstructure.