公开(公告)号：US20220386052A1

公开(公告)日：2022-12-01

申请号：US17761669

申请日：2020-05-26

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Jiale SU ,  Guoping ZHOU ,  Xinwei ZHANG ,  Changfeng XIA

IPC: H04R31/00 ,  H04R19/04 ,  B81C1/00

Abstract: A preparation method for a micro-electromechanical systems (MEMS) microphone includes the steps of: providing a silicon substrate having a silicon surface; forming an enclosed cavity in the silicon substrate; forming a plurality of spaced apart acoustic holes in the silicon substrate, each acoustic hole having two openings, one of which communicating with the cavity and the other one located on the silicon surface; forming a sacrificial layer on the silicon substrate, which includes a first filling portion, a second filling portion and a shielding portion; forming a polysilicon layer on the shielding portion; forming a recess in the silicon substrate on the side away from the silicon surface; and removing the first filling portion, the second filling portion and part of the shielding portion so that the recess is brought into communication with the cavity to form a back chamber, and that the polysilicon layer, the remainder of the shielding portion and the silicon substrate together delimit a hollow chamber, the hollow chamber communicating with the opening of the plurality of acoustic holes away from the cavity, completing the MEMS microphone.

公开(公告)号：US20200243342A1

公开(公告)日：2020-07-30

申请号：US16646946

申请日：2018-08-14

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Jiale SU ,  Changfeng XIA ,  Guoping ZHOU ,  Xinwei ZHANG

IPC: H01L21/3065 ,  H01L21/02

Abstract: A method of forming a cavity based on a deep trench erosion, comprising: providing a semiconductor substrate (200), and performing the deep trench erosion to the semiconductor substrate to form an array of a plurality of trenches (201) in the semiconductor substrate (200), a pitch (D1) between the outermost grooves in the array being greater than a pitch (D2) between the remaining trenches in the array; and preforming an annealing treatment to the semiconductor substrate (200) to form a cavity (202) in the semiconductor substrate (200).