公开(公告)号：US12249645B2

公开(公告)日：2025-03-11

申请号：US17620952

申请日：2020-05-26

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Zhili Zhang ,  Jingchuan Zhao ,  Sen Zhang

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/40 ,  H01L29/66

Abstract: A laterally diffused metal-oxide-semiconductor (LDMOS) device and a method of manufacturing the LDMOS device are disclosed. The method includes: obtaining a substrate with a drift region formed thereon, the drift region having a first conductivity type and disposed on the substrate of a second conductivity type; etching the drift region to form therein a sinking structure, the sinking structure includes at least one of an implanting groove and an implanting hole; implanting ions of the second conductivity type at the bottom of the sinking structure; forming a buried layer of the second conductivity type by causing diffusion of the ions of the second conductivity type using a thermal treatment; and filling an electrical property modification material into the sinking structure, the electrical property modification material differs from the material of the drift region.

公开(公告)号：US12272749B2

公开(公告)日：2025-04-08

申请号：US17789628

申请日：2020-09-04

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Jingchuan Zhao ,  Zhili Zhang ,  Sen Zhang

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/66

Abstract: Disclosed are a laterally diffused metal oxide semiconductor device and a method for preparing the same. The device includes a substrate (101) of a first conductivity type, a drift region (102) of a second conductivity type, a longitudinal floating field plate array and a plurality of implantation regions (103) of the first conductivity type. The drift region is located in the substrate of the first conductivity type. The longitudinal floating field plate array includes a plurality of longitudinal floating field plate structures (104) arranged at intervals in rows and columns. Each longitudinal floating field plate structures includes a dielectric layer (1041) disposed on an inner surface of a trench and a conductive layer (1042) filling the trench. The plurality of implantation regions are located in the drift region of, each implantation region is located between two adjacent longitudinal floating field plate structures in each row.