公开(公告)号：US20060262626A1

公开(公告)日：2006-11-23

申请号：US11163431

申请日：2005-10-19

申请人： Ching-Yuan Lin ,  Hong-Yi Liao ,  Yen-Tai Lin ,  Shih-Yun Lin ,  Chun-Hung Lu

发明人： Ching-Yuan Lin ,  Hong-Yi Liao ,  Yen-Tai Lin ,  Shih-Yun Lin ,  Chun-Hung Lu

IPC分类号： G11C17/18

CPC分类号： G11C16/105 ,  G11C16/3495 ,  G11C17/146 ,  G11C17/18 ,  G11C2216/26

摘要： The present invention provides a method for accessing a memory. The memory contains M one-time programmable memory blocks, and each has a first memory sector and a second memory sector. The method includes: selecting a first target memory block and reading the first target memory block. The step of selecting a first target memory block is performed by comparing the second memory sectors of N one-time programmable memory blocks from M one-time programmable memory blocks by following a search rule to select the first target memory block.

摘要翻译： 本发明提供一种访问存储器的方法。 存储器包含M个一次性可编程存储器块，并且每个具有第一存储器扇区和第二存储器扇区。 该方法包括：选择第一目标存储块并读取第一目标存储块。 通过按照搜索规则比较来自M个一次可编程存储器块的N个一次可编程存储器块的第二存储器扇区来选择第一目标存储器块来选择第一目标存储器块的步骤来选择第一目标存储器块。

公开(公告)号：US07254086B2

公开(公告)日：2007-08-07

申请号：US11163431

申请日：2005-10-19

申请人： Ching-Yuan Lin ,  Hong-Yi Liao ,  Yen-Tai Lin ,  Shih-Yun Lin ,  Chun-Hung Lu

发明人： Ching-Yuan Lin ,  Hong-Yi Liao ,  Yen-Tai Lin ,  Shih-Yun Lin ,  Chun-Hung Lu

IPC分类号： G11C8/00

CPC分类号： G11C16/105 ,  G11C16/3495 ,  G11C17/146 ,  G11C17/18 ,  G11C2216/26

摘要： The present invention provides a method for accessing a memory. The memory contains M one-time programmable memory blocks, and each has a first memory sector and a second memory sector. The method includes: selecting a first target memory block and reading the first target memory block. The step of selecting a first target memory block is performed by comparing the second memory sectors of N one-time programmable memory blocks from M one-time programmable memory blocks by following a search rule to select the first target memory block.

摘要翻译： 本发明提供一种访问存储器的方法。 存储器包含M个一次性可编程存储器块，并且每个具有第一存储器扇区和第二存储器扇区。 该方法包括：选择第一目标存储块并读取第一目标存储块。 通过按照搜索规则比较来自M个一次可编程存储器块的N个一次可编程存储器块的第二存储器扇区来选择第一目标存储器块来选择第一目标存储器块的步骤来选择第一目标存储器块。

公开(公告)号：US20070159883A1

公开(公告)日：2007-07-12

申请号：US11531278

申请日：2006-09-13

申请人： Ching-Yuan Lin ,  Yen-Tai Lin

发明人： Ching-Yuan Lin ,  Yen-Tai Lin

IPC分类号： G11C11/34 ,  G11C16/06 ,  G11C16/04

CPC分类号： G11C16/349 ,  G11C16/102 ,  G11C16/3495

摘要： A method capable of improving endurance of memory includes detecting whether a record cell is the last non-programmed record cell of a set of record cells that includes the record cell. The method includes erasing the corresponding set of multi-time programmable memory blocks and erasing the set of record cells, if the record cell is the last non-programmed record cell of the set of record cells that includes the record cell. The method further includes programming the record cell corresponding to a first non-programmed record cell in the set of record cells if the non-programmed record cell is not the last non-programmed record cell of the set of record cells.

摘要翻译： 能够提高存储器耐久性的方法包括检测记录单元是否是包括记录单元的一组记录单元的最后一个非编程记录单元。 如果记录单元是包括记录单元的记录单元组的最后一个未编程的记录单元，则该方法包括擦除相应的多次可编程存储器块组并擦除记录单元组。 该方法还包括如果非编程记录单元不是该组记录单元的最后一个非编程记录单元，则编程对应于记录单元组中的第一非编程记录单元的记录单元。

公开(公告)号：US07427889B2

公开(公告)日：2008-09-23

申请号：US11380661

申请日：2006-04-28

申请人： Yen-Tai Lin ,  Ching-Yuan Lin

发明人： Yen-Tai Lin ,  Ching-Yuan Lin

IPC分类号： G05F1/10

CPC分类号： H02M3/07 ,  G11C5/145 ,  H02M2001/009 ,  H02M2003/071

摘要： A voltage regulator has a first charge circuit, a second charge circuit, and a control circuit. The control circuit has five input terminals and two output terminals. The five input terminals are respectively coupled to a reference voltage, a first voltage source, a second voltage source, an output terminal of the first charge circuit, and an output terminal of the second charge circuit. The control circuit equalizes a voltage difference between the output terminal of the first charge circuit and the first voltage source and a voltage difference between the second voltage source and the output terminal of the second charge circuit.

摘要翻译： 电压调节器具有第一充电电路，第二充电电路和控制电路。 控制电路有五个输入端和两个输出端。 五个输入端子分别耦合到参考电压，第一电压源，第二电压源，第一充电电路的输出端子和第二充电电路的输出端子。 控制电路使第一充电电路的输出端和第一电压源之间的电压差与第二电压源与第二充电电路的输出端之间的电压差相等。

公开(公告)号：US20080218252A1

公开(公告)日：2008-09-11

申请号：US12116229

申请日：2008-05-07

申请人： Yen-Tai Lin ,  Ching-Yuan Lin

发明人： Yen-Tai Lin ,  Ching-Yuan Lin

IPC分类号： G05F1/10

CPC分类号： H02M3/07 ,  G11C5/145 ,  H02M2001/009 ,  H02M2003/071

摘要： A voltage regulator has a first charge circuit, a second charge circuit, and a control circuit. The control circuit has five input terminals and two output terminals. The five input terminals are respectively coupled to a reference voltage, a first voltage source, a second voltage source, an output terminal of the first charge circuit, and an output terminal of the second charge circuit. The control circuit equalizes a voltage difference between the output terminal of the first charge circuit and the first voltage source and a voltage difference between the second voltage source and the output terminal of the second charge circuit.

摘要翻译： 电压调节器具有第一充电电路，第二充电电路和控制电路。 控制电路有五个输入端和两个输出端。 五个输入端子分别耦合到参考电压，第一电压源，第二电压源，第一充电电路的输出端子和第二充电电路的输出端子。 控制电路使第一充电电路的输出端和第一电压源之间的电压差与第二电压源与第二充电电路的输出端之间的电压差相等。

公开(公告)号：US20080056013A1

公开(公告)日：2008-03-06

申请号：US11936095

申请日：2007-11-07

申请人： Ching-Yuan Lin ,  Yen-Tai Lin

发明人： Ching-Yuan Lin ,  Yen-Tai Lin

IPC分类号： G11C16/04

CPC分类号： G11C16/349 ,  G11C16/102 ,  G11C16/3495

摘要： A method capable of improving endurance of memory includes detecting whether a record cell is the last non-programmed record cell of a set of record cells that includes the record cell. The method includes erasing the corresponding set of multi-time programmable memory blocks and erasing the set of record cells, if the record cell is the last non-programmed record cell of the set of record cells that includes the record cell. The method further includes programming the record cell corresponding to a first non-programmed record cell in the set of record cells if the non-programmed record cell is not the last non-programmed record cell of the set of record cells.

摘要翻译： 能够提高存储器耐久性的方法包括检测记录单元是否是包括记录单元的一组记录单元的最后一个非编程记录单元。 如果记录单元是包括记录单元的记录单元组的最后一个未编程的记录单元，则该方法包括擦除相应的多次可编程存储器块组并擦除记录单元组。 该方法还包括如果非编程记录单元不是该组记录单元的最后一个非编程记录单元，则编程对应于记录单元组中的第一非编程记录单元的记录单元。

公开(公告)号：US07453312B2

公开(公告)日：2008-11-18

申请号：US12116229

申请日：2008-05-07

申请人： Yen-Tai Lin ,  Ching-Yuan Lin

发明人： Yen-Tai Lin ,  Ching-Yuan Lin

IPC分类号： G05F1/10

CPC分类号： H02M3/07 ,  G11C5/145 ,  H02M2001/009 ,  H02M2003/071

摘要： A voltage regulator has a first charge circuit, a second charge circuit, and a control circuit. The control circuit has five input terminals and two output terminals. The five input terminals are respectively coupled to a reference voltage, a first voltage source, a second voltage source, an output terminal of the first charge circuit, and an output terminal of the second charge circuit. The control circuit equalizes a voltage difference between the output terminal of the first charge circuit and the first voltage source and a voltage difference between the second voltage source and the output terminal of the second charge circuit.

公开(公告)号：US20070252640A1

公开(公告)日：2007-11-01

申请号：US11380661

申请日：2006-04-28

申请人： Yen-Tai Lin ,  Ching-Yuan Lin

发明人： Yen-Tai Lin ,  Ching-Yuan Lin

IPC分类号： G05F1/10

CPC分类号： H02M3/07 ,  G11C5/145 ,  H02M2001/009 ,  H02M2003/071

摘要： A voltage regulator has a first charge circuit, a second charge circuit, and a control circuit. The control circuit has five input terminals and two output terminals. The five input terminals are respectively coupled to a reference voltage, a first voltage source, a second voltage source, an output terminal of the first charge circuit, and an output terminal of the second charge circuit. The control circuit equalizes a voltage difference between the output terminal of the first charge circuit and the first voltage source and a voltage difference between the second voltage source and the output terminal of the second charge circuit.

摘要翻译： 电压调节器具有第一充电电路，第二充电电路和控制电路。 控制电路有五个输入端和两个输出端。 五个输入端子分别耦合到参考电压，第一电压源，第二电压源，第一充电电路的输出端子和第二充电电路的输出端子。 控制电路使第一充电电路的输出端和第一电压源之间的电压差与第二电压源与第二充电电路的输出端之间的电压差相等。

公开(公告)号：US06819620B2

公开(公告)日：2004-11-16

申请号：US10248495

申请日：2003-01-23

申请人： Yen-Tai Lin ,  Ching-Yuan Lin ,  Chien-Hung Ho

发明人： Yen-Tai Lin ,  Ching-Yuan Lin ,  Chien-Hung Ho

IPC分类号： G11C1134

CPC分类号： G11C16/30

摘要： A power supply used for providing a flash memory with an operating voltage has a plurality of memory blocks and a plurality of decoders corresponding to the memory blocks. Each memory block has a plurality of memory cells for storing binary data. Each decoder is used for selecting memory cells in the corresponding memory block. The power supply has at least three power sources for generating different voltages, and controls the power sources for making a voltage difference between a high voltage level and a low voltage level of the unselected decoder less than a voltage difference between a high voltage level and a low voltage level of the selected decoder.

摘要翻译： 用于提供具有工作电压的闪速存储器的电源具有多个存储块和对应于存储块的多个解码器。 每个存储块具有用于存储二进制数据的多个存储单元。 每个解码器用于选择相应存储块中的存储单元。 电源具有用于产生不同电压的至少三个电源，并且控制电源以使未选择的解码器的高电压电平和低电压电平之间的电压差小于高电压电平和高电压电平之间的电压差 所选解码器的低电压电平。

公开(公告)号：US07450418B2

公开(公告)日：2008-11-11

申请号：US11403437

申请日：2006-04-12

申请人： Hong-Yi Liao ,  Wu-Chang Chang ,  Ching-Yuan Lin

发明人： Hong-Yi Liao ,  Wu-Chang Chang ,  Ching-Yuan Lin

IPC分类号： G11C11/34

CPC分类号： G11C16/0416 ,  G11C16/0433 ,  H01L27/115 ,  H01L27/11568

摘要： An operating method of a non-volatile memory is provided. The non-volatile memory includes plural memory cells. Each memory cell includes a charge storage structure, a gate, and a source and a drain disposed in the well on the both sides of the gate. During an erasing operation, a first voltage is applied to the source of the selected memory cell, a second voltage is applied to the gate of each selected memory cell, and a third voltage is applied to the well; and the drain of the selected memory cell is floated, so that the selected memory cell is erased. In the meantime, the fourth voltage is applied to the drain of each unselected memory cell, the fifth voltage is applied to the gate of the unselected memory cell, and the source of the unselected memory cell is floated to prevent the unselected memory cell from being erased.

摘要翻译： 提供了一种非易失性存储器的操作方法。 非易失性存储器包括多个存储单元。 每个存储单元包括电荷存储结构，栅极以及设置在栅极两侧的阱中的源极和漏极。 在擦除操作期间，将第一电压施加到所选择的存储单元的源极，将第二电压施加到每个选择的存储单元的栅极，并将第三电压施加到阱; 并且所选择的存储单元的漏极浮动，使得所选存储单元被擦除。 同时，将第四电压施加到每个未选择的存储单元的漏极，第五电压被施加到未选择的存储单元的栅极，并且未选择的存储单元的源被浮置以防止未选择的存储单元 擦除