公开(公告)号：US20200006551A1

公开(公告)日：2020-01-02

申请号：US16451733

申请日：2019-06-25

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Zhonghai SHI ,  Scott WARRICK

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/10

Abstract: Embodiments described herein relate to a method of manufacture of an LDMOS transistor an LDMOS transistor, and an integrated circuit comprising an LDMOS transistor. The method of manufacture of the LDMOS device comprises implanting a Fluorine dopant in a drift region of the LDMOS device in order to improve alignment between the drift region of the LDMOS transistor and a thicker area of a single gate oxide layer grown on the drift region and a channel region of the LDMOS transistor.