公开(公告)号：US20200006551A1

公开(公告)日：2020-01-02

申请号：US16451733

申请日：2019-06-25

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Zhonghai SHI ,  Scott WARRICK

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/10

Abstract: Embodiments described herein relate to a method of manufacture of an LDMOS transistor an LDMOS transistor, and an integrated circuit comprising an LDMOS transistor. The method of manufacture of the LDMOS device comprises implanting a Fluorine dopant in a drift region of the LDMOS device in order to improve alignment between the drift region of the LDMOS transistor and a thicker area of a single gate oxide layer grown on the drift region and a channel region of the LDMOS transistor.

公开(公告)号：US20210082811A1

公开(公告)日：2021-03-18

申请号：US16954430

申请日：2019-02-12

Applicant: Scott WARRICK ,  Cirrus Logic International Semiconductor Ltd.

Inventor： Scott WARRICK ,  cHRISTIAN LARSEN ,  Eric J. KING ,  John L. MELANSON ,  Anthony S. DOY ,  David M. BIVEN

IPC: H01L23/522 ,  H01L23/31 ,  H01L23/00

Abstract: A method for fabricating an integrated circuit upon a substrate may include forming a passive electrical component in a non-final layer of the integrated circuit and forming one or more electrical contacts in a final layer of the integrated circuit such that the one or more electrical contacts and the passive electrical component are positioned in a manner such that an imaginary line perpendicular to and from a surface of the substrate intersects the passive electrical component and the one or more electrical contacts.

公开(公告)号：US20190103490A1

公开(公告)日：2019-04-04

申请号：US15720977

申请日：2017-09-29

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Scott WARRICK ,  Justin DOUGHERTY ,  Alexander BARR ,  Christian LARSEN ,  Marc L. TARABBIA ,  Ying YING

IPC: H01L29/78 ,  H01L21/8238 ,  H01L29/06 ,  H01L21/76

Abstract: A dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) may include a MOSFET having a channel region, a drain, and a source, a first gate formed proximate to the channel region, a drain extension region formed proximate to the drain, and a second gate formed proximate to the drain extension region.