THERMO-OPTIC PHASE SHIFTER FOR SEMICONDUCTOR OPTICAL WAVEGUIDE

    公开(公告)号:US20180314082A1

    公开(公告)日:2018-11-01

    申请号:US15498274

    申请日:2017-04-26

    Abstract: Embodiments include a method and associated apparatuses for phase-shifting an optical signal. The method comprises receiving, at a first end of an optical waveguide formed in a semiconductor layer and extending along a first axis, an optical signal having a first phase. The method further comprises transmitting, at a second end of the optical waveguide opposite the first end, a modified optical signal having a second phase different than the first phase. Transmitting a modified optical signal comprises applying a voltage signal between a first contact region and a second contact region formed in the semiconductor layer apart from the first axis. Applying a voltage signal causes an electrical current to be conducted along a dimension of the optical waveguide. The electrical current causes resistive heating of the optical waveguide and a desired phase shift between the first phase and the second phase.

    ELECTRO-OPTICAL MODULATOR USING RIBBED WAVEGUIDES
    2.
    发明申请
    ELECTRO-OPTICAL MODULATOR USING RIBBED WAVEGUIDES 有权
    使用RIBBED WAVEGUIDES的电光调制器

    公开(公告)号:US20160170240A1

    公开(公告)日:2016-06-16

    申请号:US14248081

    申请日:2014-04-08

    Abstract: An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.

    Abstract translation: 光调制器可以包括下波导,上波导和介于其间的电介质层。 当在下波导和上波导之间产生电压电位时,这些层形成硅 - 绝缘体 - 硅电容器(也称为SISCAP)引导件,其提供通过调制器的光信号的有效的高速光调制。 在一个实施例中,至少一个波导包括在电荷调制区域处对准的相应的脊部分,其可以有助于限制光学调制器中的光学模式(例如,在宽度方向上)。 在另一个实施例中,脊部可以形成在下波导和上波导两者上。 这些脊部可以在垂直方向(例如,厚度方向)上对准,使得脊重叠,这可以通过使电荷调制区域中的光学模式居中来进一步提高光学效率。

    ELECTRO-OPTICAL MODULATOR USING WAVEGUIDES WITH OVERLAPPING RIDGES

    公开(公告)号:US20220082875A1

    公开(公告)日:2022-03-17

    申请号:US17456468

    申请日:2021-11-24

    Abstract: An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.

    ELECTRO-OPTICAL MODULATOR USING WAVEGUIDES WITH OVERLAPPING RIDGES

    公开(公告)号:US20200183198A1

    公开(公告)日:2020-06-11

    申请号:US16789317

    申请日:2020-02-12

    Abstract: An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.

    ELECTRO-OPTICAL MODULATOR USING WAVEGUIDES WITH OVERLAPPING RIDGES

    公开(公告)号:US20170269393A1

    公开(公告)日:2017-09-21

    申请号:US15615290

    申请日:2017-06-06

    Abstract: An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.

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