公开(公告)号：US20240319440A1

公开(公告)日：2024-09-26

申请号：US18189668

申请日：2023-03-24

Applicant: Cisco Technology, Inc.

Inventor： Long CHEN

IPC: G02B6/136 ,  G02B6/12 ,  G02B6/132

CPC classification number: G02B6/136 ,  G02B6/12004 ,  G02B6/132 ,  G02B2006/1204 ,  G02B2006/12047 ,  G02B2006/12085 ,  G02B2006/12197

Abstract: A method includes providing a sacrificial wafer, contacting the sacrificial wafer to a photonic device wafer, and bonding the sacrificial wafer to the photonic device wafer. The sacrificial wafer includes a substrate and an electro-optical material strip disposed within a dielectric matrix. The photonic device wafer includes a photonic device die, and the electro-optical material strip is disposed proximate to the photonic device die. A photonic device structure includes a photonic device wafer and a sacrificial wafer. The photonic device structure includes a device wafer substrate and a photonic device die fabricated in a device wafer dielectric layer. The sacrificial wafer includes a sacrificial wafer substrate and an electro-optical material strip embedded in a sacrificial wafer dielectric matrix. The sacrificial wafer dielectric matrix is bonded to the device wafer dielectric layer, and the electro-optical material strip is disposed proximate to the photonic device die.

公开(公告)号：US20240310579A1

公开(公告)日：2024-09-19

申请号：US18673366

申请日：2024-05-24

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： CHIH-TSUNG SHIH ,  HAU-YAN LU ,  WEI-KANG LIU ,  YINGKIT FELIX TSUI

IPC: G02B6/132 ,  G02B6/12 ,  G02B6/122

CPC classification number: G02B6/132 ,  G02B6/1223 ,  G02B2006/12061

Abstract: A method for forming an optical waveguide structure includes following operations. A substrate is received. A semiconductor layer is formed on the substrate. The semiconductor layer is patterned to form at least a waveguide in the substrate and at least a trench in the semiconductor layer. A first gap-filling operation is performed to form a first dielectric portion in the trench. A second gap-filling operation is performed to form a second dielectric portion over the first dielectric portion. An air seam is sealed within the second dielectric portion. A third gap-filling operation is performed to form a third dielectric portion over the second dielectric portion.

公开(公告)号：US12084761B2

公开(公告)日：2024-09-10

申请号：US18111385

申请日：2023-02-17

Applicant: Applied Materials, Inc.

Inventor： Karl J. Armstrong ,  Ludovic Godet ,  Brian Alexander Cohen ,  Wayne McMillan ,  James D. Strassner ,  Benjamin B. Riordon

IPC: H01L21/677 ,  C23C14/04 ,  C23C14/06 ,  C23C14/08 ,  C23C14/14 ,  C23C16/04 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/68 ,  H01L21/683 ,  G02B6/132

CPC classification number: C23C16/405 ,  C23C14/042 ,  C23C14/0652 ,  C23C14/083 ,  C23C14/086 ,  C23C14/14 ,  C23C16/042 ,  C23C16/24 ,  C23C16/345 ,  C23C16/407 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/67766 ,  H01L21/67778 ,  H01L21/682 ,  H01L21/6838 ,  G02B6/132

Abstract: Embodiments of the present disclosure relate to forming multi-depth films for the fabrication of optical devices. One embodiment includes disposing a base layer of a device material on a surface of a substrate. One or more mandrels of the device material are disposed on the base layer. The disposing the one or more mandrels includes positioning a mask over of the base layer. The device material is deposited with the mask positioned over the base layer to form an optical device having the base layer with a base layer depth and the one or more mandrels having a first mandrel depth and a second mandrel depth.

公开(公告)号：US20240210619A1

公开(公告)日：2024-06-27

申请号：US18596662

申请日：2024-03-06

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Feng-Wei KUO ,  Chewn-Pu JOU ,  Hsing-Kuo Hsia

IPC: G02B6/12 ,  G02B6/124 ,  G02B6/132 ,  H01S5/026

CPC classification number: G02B6/12019 ,  G02B6/124 ,  G02B6/132 ,  H01S5/026 ,  G02B2006/12121

Abstract: A device includes a dielectric layer, a plurality of grating structures, and a dielectric material between the plurality of grating structures and on top of the plurality of grating structures. The grating structures are arranged on the dielectric layer and separated from each other, the plurality of grating structures each having a bottom portion and top portion, the top portion having a first width and the bottom portion having a second width, the second width being larger than the first width.

公开(公告)号：US12007604B2

公开(公告)日：2024-06-11

申请号：US18092492

申请日：2023-01-03

Applicant: POET Technologies, Inc.

Inventor： William Ring ,  Miroslaw Florjanczyk ,  Suresh Venkatesan

IPC: G02B6/132 ,  C23C16/34 ,  C23C16/56 ,  C23C16/50 ,  H01J37/32

CPC classification number: G02B6/132 ,  C23C16/34 ,  C23C16/56 ,  C23C16/50 ,  H01J37/32091 ,  H01J2237/3321

Abstract: A method for depositing silicon oxynitride film structures is provided that is used to form planar waveguides. These film structures are deposited on substrates and the combination of the substrate and the planar waveguide is used in the formation of optical interposers and subassemblies. The silicon oxynitride film structures are deposited using low thermal budget processes and hydrogen-free oxygen and hydrogen-free nitrogen precursors to produce planar waveguides that exhibit low losses for optical signals transmitted through the waveguide of 1 dB/cm or less. The silicon oxynitride film structures and substrate exhibit low stress levels of less than 20 MPa.

公开(公告)号：US20240183663A1

公开(公告)日：2024-06-06

申请号：US18554376

申请日：2022-01-11

Applicant: OSCPS MOTION SENSING INC.

Inventor： Kazem ZANDI ,  Richard BEAUDRY

IPC: G01C19/66 ,  G02B6/12 ,  G02B6/124 ,  G02B6/132 ,  G02B6/136

CPC classification number: G01C19/661 ,  G02B6/12007 ,  G02B6/124 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12104 ,  G02B2006/12107 ,  G02B2006/12121

Abstract: An optical ring resonator-based gyroscope includes a photonic integrated circuit (PIC) chip including a plurality of optical elements, the plurality of optical elements including a resonator ring; and a printed circuit board including a plurality of electrical components, the photonic integrated circuit being mounted on a surface of the printed circuit board, the photonic integrated circuit and the printed circuit board being electrically connected. A photonic integrated circuit (PIC) chip including a substrate; a dielectric layer; a first waveguide layer forming at least: a ring resonator and reflector portions; a second waveguide layer forming at least: vertical Bragg grating couplers disposed over one of the plurality of reflector portions, a chip waveguide; a magneto-optic layer encapsulated in the dielectric layer; and a metal layer forming a plurality of metal connection pads and a plurality of wire traces for electrically connecting the PIC chip to electronic components.

公开(公告)号：US11996489B2

公开(公告)日：2024-05-28

申请号：US17615976

申请日：2019-06-06

Applicant: Nippon Telegraph and Telephone Corporation

Inventor： Tai Tsuchizawa ,  Takuma Aihara ,  Tatsuro Hiraki

IPC: H01L31/0232 ,  G02B6/122 ,  G02B6/132 ,  H01L31/028 ,  H01L31/103 ,  H01L31/18 ,  G02B6/12

CPC classification number: H01L31/02327 ,  G02B6/1228 ,  G02B6/132 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1808 ,  G02B2006/12061 ,  G02B2006/12123

Abstract: A silicon nitride core is formed on a silicon core via a first silicon oxide layer, and a germanium pattern caused to selectively grow in an opening penetrating through a second silicon oxide layer formed on the silicon nitride core and the first silicon oxide layer is formed on a lower silicon pattern formed to be continuous with the silicon core, thereby constituting a Ge photodiode.

公开(公告)号：US20240085627A1

公开(公告)日：2024-03-14

申请号：US18262413

申请日：2021-02-26

Applicant: Nippon Telegraph and Telephone Corporation

Inventor： Kenya Suzuki ,  Keita Yamaguchi ,  Ai Yanagihara ,  Masashi Ota

IPC: G02B6/132 ,  C03B19/14 ,  G03F7/00

CPC classification number: G02B6/132 ,  C03B19/1407 ,  G03F7/001 ,  G03F7/0035

Abstract: An optical circuit to be manufactured on a wafer has a problem that characteristics are distributed (biased) in a wafer plane due to various causes in manufacturing. The present invention is characterized in that refractive index distribution of an upper cladding is adjusted on the basis of refractive index distribution of a lower cladding and a core film, a film thickness of the core film, and in-plane distribution such as an execution refractive index of an optical waveguide (calculated from a width of a core pattern).

公开(公告)号：US20240045143A1

公开(公告)日：2024-02-08

申请号：US17817032

申请日：2022-08-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： CHIH-TSUNG SHIH ,  HAU-YAN LU ,  WEI-KANG LIU ,  YINGKIT FELIX TSUI

IPC: G02B6/132 ,  G02B6/122

CPC classification number: G02B6/132 ,  G02B6/1223 ,  G02B2006/12061

Abstract: An optical waveguide structure of a semiconductor photonic device includes a first semiconductor waveguide, a second semiconductor waveguide, and an air seam between the first and second semiconductor waveguides. The semiconductor waveguides extend in a first direction, and a plurality of air seams extend in a second direction. Each of the air seams is disposed between two adjacent semiconductor waveguides. A distance between the two adjacent semiconductor waveguides is less than a width of each semiconductor waveguide.

公开(公告)号：US20240004134A1

公开(公告)日：2024-01-04

申请号：US17855575

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Tse TANG ,  Chewn-Pu JOU ,  Chia-Ju YU ,  CHENG HSIAO

IPC: G02B6/24 ,  G02B6/30 ,  G02B6/136 ,  G02B6/122 ,  G02B6/132

CPC classification number: G02B6/243 ,  G02B6/305 ,  G02B6/136 ,  G02B6/1228 ,  G02B6/132

Abstract: The present disclosure relates to optical waveguide termination devices. In some embodiments, an optical waveguide termination device is coupled to an end of an optical waveguide. The optical waveguide termination device is a tapered structure. In various embodiments, an optical absorption rate of the tapered structure is increased to enhance a termination efficiency. The optical absorption is increased by highly-doped material, multi-layer structure, different cladding, and periodic structure. The enhancement of the termination efficiency benefits size reduction of the tapered structure.