公开(公告)号：US20080203330A1

公开(公告)日：2008-08-28

申请号：US12150207

申请日：2008-04-24

申请人： Cornel Danciu ,  Thomas Abels ,  Brian Good

发明人： Cornel Danciu ,  Thomas Abels ,  Brian Good

IPC分类号： G21F3/00

CPC分类号： H01J37/09 ,  C23C14/48 ,  C23C14/564 ,  H01J2237/05 ,  H01J2237/31701

摘要： A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.

摘要翻译： 用于半导体制造装置（例如离子注入装置）中的屏蔽组件包括构造成覆盖质量分析室的内表面的一个或多个可移除屏蔽构件。 屏蔽组件减少了积累在内表面上的过程副产物。 在一个实施例中，屏蔽组件包括第一和第二屏蔽构件，每个屏蔽构件具有整体构造并且构造成覆盖质量分析室中的磁性区域。 屏蔽构件理想地由石墨或浸渍石墨制成，以最小化由被质量分析室的内表面侵蚀的金属颗粒引起的被处理半导体器件的污染。

公开(公告)号：US07772576B2

公开(公告)日：2010-08-10

申请号：US12150207

申请日：2008-04-24

申请人： Cornel Danciu ,  Thomas Abels ,  Brian Good

发明人： Cornel Danciu ,  Thomas Abels ,  Brian Good

IPC分类号： G21F5/02

CPC分类号： H01J37/09 ,  C23C14/48 ,  C23C14/564 ,  H01J2237/05 ,  H01J2237/31701

摘要： A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.

摘要翻译： 用于半导体制造装置（例如离子注入装置）中的屏蔽组件包括构造成覆盖质量分析室的内表面的一个或多个可移除屏蔽构件。 屏蔽组件减少了积累在内表面上的过程副产物。 在一个实施例中，屏蔽组件包括第一和第二屏蔽构件，每个屏蔽构件具有整体构造并且构造成覆盖质量分析室中的磁性区域。 屏蔽构件理想地由石墨或浸渍石墨制成，以最小化由被质量分析室的内表面侵蚀的金属颗粒引起的被处理半导体器件的污染。

公开(公告)号：US07378670B2

公开(公告)日：2008-05-27

申请号：US10177970

申请日：2002-06-21

申请人： Cornel Danciu ,  Thomas Abels ,  Brian Good

发明人： Cornel Danciu ,  Thomas Abels ,  Brian Good

IPC分类号： G21K5/10

CPC分类号： H01J37/09 ,  C23C14/48 ,  C23C14/564 ,  H01J2237/05 ,  H01J2237/31701

摘要： A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.

摘要翻译： 用于半导体制造装置（例如离子注入装置）中的屏蔽组件包括构造成覆盖质量分析室的内表面的一个或多个可移除屏蔽构件。 屏蔽组件减少了积累在内表面上的过程副产物。 在一个实施例中，屏蔽组件包括第一和第二屏蔽构件，每个屏蔽构件具有整体构造并且构造成覆盖质量分析室中的磁性区域。 屏蔽构件理想地由石墨或浸渍石墨制成，以最小化由被质量分析室的内表面侵蚀的金属颗粒引起的被处理半导体器件的污染。