公开(公告)号：US4954455A

公开(公告)日：1990-09-04

申请号：US259472

申请日：1988-10-18

申请人： Drew Wanderman ,  Matthew Weinberg

发明人： Drew Wanderman ,  Matthew Weinberg

IPC分类号： H01L21/74 ,  H01L27/102

CPC分类号： H01L21/74 ,  H01L27/1025 ,  Y10S438/953

摘要： The invention comprises an improved bipolar memory device having enhanced protection against the effects of alpha particles comprising at least one memory cell having a buried layer forming at least a portion of the collector of one of the transistors in the memory cell, said buried layer being located sufficiently close to a base layer in only the memory portion of the device to provide a sufficiently high capacitance between said buried layer and said base layer to prevent the occurrence of a soft error caused by an alpha particle striking the structure without interfering with the speed of the device.

摘要翻译： 本发明包括改进的双极存储器件，其具有增强的防止α粒子影响的保护，所述α粒子包括至少一个存储单元，所述至少一个存储单元具有形成存储器单元中的一个晶体管的集电极的至少一部分的掩埋层，所述掩埋层位于 足够接近仅在设备的存储器部分中的基底层，以在所述掩埋层和所述基底层之间提供足够高的电容，以防止由α粒子撞击结构而引起的软误差的发生而不会干扰 装置。