公开(公告)号：US11873905B2

公开(公告)日：2024-01-16

申请号：US17783150

申请日：2019-12-31

Applicant: FLOWSERVE KSM CO., LTD.

Inventor： Yun Ho Kim ,  Joo Hwan Kim

IPC: F16J15/3284 ,  F16J15/54 ,  F04D29/12

CPC classification number: F16J15/54 ,  F04D29/12

Abstract: A stop seal for application of high temperature and high pressure is disclosed. A stop seal contains a first seal member and a second seal member, wherein the stop seal can prevent a fluid of high temperature and high pressure from leaking into an atmospheric space because, when the fluid of high temperature is introduced and the first seal member is moved toward a direction adjacent to a pump shaft, an opposite side of the second seal member is moved from a first position to a second position by the first seal member so as to block a gap between a pump side and a housing.

公开(公告)号：US11251061B2

公开(公告)日：2022-02-15

申请号：US16973112

申请日：2019-10-31

Applicant: KSM COMPONENT CO., LTD. ,  FLOWSERVE KSM CO., LTD.

Inventor： Yun Ho Kim ,  Joo Hwan Kim ,  Ki Ryong Lee

IPC: H01L21/02 ,  C04B35/111 ,  H01L21/683 ,  H01L21/687 ,  C04B35/645 ,  C04B35/117

Abstract: Disclosed are: an electrostatic chuck having a high volume resistivity so as to reduce a leakage current, thereby improving the adsorption and desorption response characteristics of a semiconductor wafer; and a manufacturing method therefor. The electrostatic chuck is a sintered body in which an electrode is impregnated so as to fix a semiconductor wafer by electrostatic force, and comprises alumina, a sintering aid, and a rare earth composite oxide comprising two to five different rare earth metals, has adsorption and desorption response characteristics of a semiconductor wafer of two seconds or less, and has a volume resistivity at room temperature of 1.0E+16 Ω·cm to 1.0E+17 Ω·cm.