RF power control device for RF plasma applications
    1.
    发明授权
    RF power control device for RF plasma applications 有权
    射频等离子体应用的射频功率控制装置

    公开(公告)号:US06791274B1

    公开(公告)日:2004-09-14

    申请号:US10620129

    申请日:2003-07-15

    IPC分类号: H01J724

    CPC分类号: H01J37/32174 H01J37/32082

    摘要: There is provided by this invention an improved rf power control device for plasma applications for optimization of the feedback control voltage in the presence of harmonic and non-harmonic spurious frequencies. In this system, an oscillator and mixer, similar to those normally used in radio receiver applications are placed at the sampled output of the solid state rf signal source used for plasma ignition. The sampled output is mixed to a low frequency and filtered to remove the spurious frequencies that is created in the non-linear plasma. In this way, the feedback power control essentially ignores the spurious frequencies. In this application, the oscillator and mixer do not interfere with other desirable system characteristics and effectively isolate the feedback control voltage from changes in plasma spurious content. This allows rf power to be delivered to the plasma with greater accuracy than would otherwise be possible with conventional power control device and methods.

    摘要翻译: 本发明提供了一种用于等离子体应用的改进的射频功率控制装置,用于在存在谐波和非谐波杂散频率的情况下优化反馈控制电压。 在该系统中,类似于在无线电接收机应用中通常使用的振荡器和混频器被放置在用于等离子体点火的固态rf信号源的采样输出端。 将采样输出混合到低频并进行滤波以去除在非线性等离子体中产生的杂散频率。 以这种方式,反馈功率控制基本上忽略了杂散频率。 在本应用中,振荡器和混频器不会干扰其他所需的系统特性,并有效地将反馈控制电压与等离子体杂散内容的变化隔离开来。 这允许rf功率以比常规功率控制装置和方法可能的方式更高的精度传送到等离子体。