公开(公告)号：US20240297230A1

公开(公告)日：2024-09-05

申请号：US18177592

申请日：2023-03-02

Applicant: GAN SYSTEMS INC.

Inventor： Seyedarmin MIREMAD ,  Iman ABDALI MASHHADI ,  Atrin TAVAKOLI ,  Hossein MOUSAVIAN

IPC: H01L29/417 ,  H01L29/10 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/41766 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66462

Abstract: Overdriving a power field-effect transistor. In response to a detection that the power field-effect transistor has entered the saturation region, the gate node of the power field-effect transistor is overdriven with a higher voltage. The detection of whether the power field-effect transistor is within the saturation region is done with a sense field-effect transistor. This sense field-effect transistor uses the same epitaxial stack of semiconductor layers as the power field-effect transistor. That is, the power field-effect transistor includes a part of an epitaxial stack of semiconductor layers having a heterojunction between at least two adjacent semiconductor layers, and the sense field-effect transistor includes another part of this same epitaxial stack of semiconductor layers.