公开(公告)号：US20140227879A1

公开(公告)日：2014-08-14

申请号：US13763399

申请日：2013-02-08

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Wontae Hwang ,  IL Goo Kim ,  DAE-HAN Choi ,  Sang Cheol Han

IPC: H01L21/308

CPC classification number: H01L21/3086 ,  H01L29/66795 ,  Y10S438/946 ,  Y10S438/947

Abstract: Methods for fabricating integrated circuits are provided herein. In an embodiment, a method for fabricating an integrated circuit includes providing a mandrel layer overlying a semiconductor substrate and patterning the mandrel layer into mandrel structures. The method further includes forming a protective layer between the mandrel structures. Spacers are formed around each of the mandrel structures and overlying the protective layer to define exposed regions of the protective layer and covered regions of the protective layer. The exposed regions of the protective layer are etched using the spacers and the mandrel structures as a mask. The spacers are removed from the covered regions of the protective layer. The covered regions of the protective layer form mask segments for etching the semiconductor substrate. The method removes the mandrel structures and etches the semiconductor substrate exposed between mask segments to form semiconductor fin structures.

Abstract translation: 本文提供了用于制造集成电路的方法。 在一个实施例中，一种用于制造集成电路的方法包括提供覆盖在半导体衬底上的心轴层，并将心轴层图案化成心轴结构。 该方法还包括在心轴结构之间形成保护层。 间隔件形成在每个心轴结构周围并且覆盖保护层以限定保护层的暴露区域和保护层的覆盖区域。 使用间隔件和心轴结构作为掩模来蚀刻保护层的暴露区域。 从保护层的覆盖区域移除间隔物。 保护层的覆盖区域形成用于蚀刻半导体衬底的掩模段。 该方法去除芯棒结构并蚀刻暴露在掩模段之间的半导体衬底以形成半导体鳍结构。