METHODS AND CONTROLLERS FOR CONTROLLING FOCUS OF ULTRAVIOLET LIGHT FROM A LITHOGRAPHIC IMAGING SYSTEM, AND APPARATUSES FOR FORMING AN INTEGRATED CIRCUIT EMPLOYING THE SAME
    1.
    发明申请
    METHODS AND CONTROLLERS FOR CONTROLLING FOCUS OF ULTRAVIOLET LIGHT FROM A LITHOGRAPHIC IMAGING SYSTEM, AND APPARATUSES FOR FORMING AN INTEGRATED CIRCUIT EMPLOYING THE SAME 审中-公开
    用于控制来自地平面成像系统的超紫外线聚焦的方法和控制器,以及用于形成使用其的集成电路的装置

    公开(公告)号:US20160033879A1

    公开(公告)日:2016-02-04

    申请号:US14446784

    申请日:2014-07-30

    CPC classification number: G03F7/70641

    Abstract: Methods and controllers for controlling focus of ultraviolet light produced by a lithographic imaging system, and apparatuses for forming an integrated circuit employing the same are provided. In an embodiment, a method includes providing a wafer having a resist film disposed thereon. The resist film is patterned through illumination of a lithography mask with ultraviolet light at an off-normal incidence angle with a first test pattern formed at a first pitch and a second test pattern formed at a second pitch different from the first pitch. Non-telecentricity induced shift of the first and second test patterns is measured to produce relative shift data using a measurement device. Focus of the ultraviolet light is adjusted based upon comparison of the relative shift data to a pre-determined correlation between the non-telecentricity induced shift of the first and second test patterns as a function of focus error.

    Abstract translation: 提供了用于控制由光刻成像系统产生的紫外光的焦点的方法和控制器,以及用于形成使用该光学成像系统的集成电路的装置。 在一个实施例中,一种方法包括提供其上设置有抗蚀剂膜的晶片。 通过以与第一间距形成的第一测试图案和以第一间距不同的第二间距形成的第二测试图案以非法入射角的紫外光照射光刻掩模来对抗蚀剂膜进行图案化。 测量第一和第二测试图案的非远心引起的偏移,以使用测量装置产生相对移位数据。 基于相对移位数据与作为焦点误差的函数的第一和第二测试图案的非远心引起的偏移之间的预定相关性进行比较来调整紫外线的焦点。

Patent Agency Ranking