Overlay measurment device
    2.
    发明授权

    公开(公告)号:US12001146B2

    公开(公告)日:2024-06-04

    申请号:US17292994

    申请日:2019-09-11

    CPC classification number: G03F7/70633 G02B27/0955 G02B27/1006 G03F7/70641

    Abstract: An overlay measurement device for measuring an error between a first overlay mark and a second overlay mark respectively formed on different layers formed on a wafer is proposed. The device includes a light source, a first beam splitter configured to split a beam emitted from the light source into two beams, a first color filter configured to adjust a center wavelength and a band width of one of the beams split by the first beam splitter so that the center wavelength and the band width of one of the beams become suitable for acquiring an image of the first overlay mark.

    EXPOSURE APPARATUS, CONTROL METHOD OF EXPOSURE APPARATUS, INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND ARTICLE MANUFACTURING METHOD

    公开(公告)号:US20240126182A1

    公开(公告)日:2024-04-18

    申请号:US18483918

    申请日:2023-10-10

    Inventor: JUN MOIZUMI

    CPC classification number: G03F7/70641 G03F7/706845

    Abstract: An apparatus includes a control unit configured to control an adjustment unit for adjusting imaging characteristics of an optical system. In a period spanning a plurality of lots, the control unit measures imaging characteristics of the optical system, and decides a prediction coefficient in a prediction formula to fit the prediction formula to measurement data obtained by the measurement in the period spanning the plurality of lots. The prediction formula is a polynomial function including a term representing a change in measurement value of the imaging characteristics caused by changing at least one of an illumination mode and an original between lots. The control unit decides the term of the polynomial function such that a fitting residual falls within an allowable range.

    Method of measuring misregistration in the manufacture of topographic semiconductor device wafers

    公开(公告)号:US11880141B2

    公开(公告)日:2024-01-23

    申请号:US17673131

    申请日:2022-02-16

    Abstract: A method of measuring misregistration in the manufacture of semiconductor device wafers including providing a multilayered semiconductor device wafer including at least a first layer and a second layer including at least one misregistration measurement target including a first periodic structure formed together with the first layer having a first pitch and a second periodic structure formed together with the second layer having a second pitch, imaging the first layer and the second layer at a depth of focus and using light having at least one first wavelength that causes images of both the first layer and the second layer to appear in at least one plane within the depth of focus and quantifying offset in the at least one plane between the images of the first layer and the second layer, thereby to calculate misregistration of the first layer and the second layer.

    EXPOSURE APPARATUS, EXPOSURE METHOD, AND METHOD OF MANUFACTURING ARTICLE

    公开(公告)号:US20230185205A1

    公开(公告)日:2023-06-15

    申请号:US18062072

    申请日:2022-12-06

    CPC classification number: G03F7/70725 G03F7/70775 G03F7/70641

    Abstract: An exposure apparatus including an obtainment unit configured to obtain, for each of a plurality of exposure regions on a substrate, surface positions in a height direction in the exposure region, and a control unit configured to control, based on the obtained surface positions, driving of a substrate stage in the height direction, wherein the control unit obtains an approximate surface approximately representing a cross-sectional shape of a surface of the exposure region from the obtained surface positions obtained, and for a first exposure region for which information related to the approximate surface does not exceed a predetermined range, controls the driving based on a correction value related to the driving obtained from an approximate surface approximately representing a cross-sectional shape of a surface of the exposure region that has been exposed prior to the first exposure region.

    EXPOSURE APPARATUS AND METHOD
    10.
    发明申请

    公开(公告)号:US20190079421A1

    公开(公告)日:2019-03-14

    申请号:US15907482

    申请日:2018-02-28

    Inventor: Takuya MIZUTANI

    Abstract: According to one embodiment, an exposure apparatus performs exposure to transcribe a circuit pattern onto each of a plurality of sections on a wafer. The exposure apparatus includes a measurement device and a control device. The control device sets, on each of a first section and a second section adjacent to each other among the plurality of sections, a measurement point at a position offset from a reference position of each section. The control device causes the measurement device to measure surface information at each measurement point. The control device executes focus leveling control for exposure on the basis of the surface information measured at each measurement point.

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