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公开(公告)号:US12092965B2
公开(公告)日:2024-09-17
申请号:US17313135
申请日:2021-05-06
Applicant: ASML Netherlands B.V.
Inventor: Venugopal Vellanki , Vivek Kumar Jain , Stefan Hunsche
IPC: G06F30/20 , G03F1/60 , G03F1/84 , G03F7/00 , G06F30/398 , G06N20/00 , G06F119/18
CPC classification number: G03F7/7065 , G03F1/60 , G03F1/84 , G03F7/705 , G03F7/70525 , G03F7/70641 , G03F7/70666 , G06F30/398 , G06N20/00 , G06F30/20 , G06F2119/18
Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.
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公开(公告)号:US12001146B2
公开(公告)日:2024-06-04
申请号:US17292994
申请日:2019-09-11
Applicant: AUROS TECHNOLOGY, INC.
Inventor: Sun Hyoung Lee , Kil Soo Lee , Seung Soo Lee , Gyu Nam Park
CPC classification number: G03F7/70633 , G02B27/0955 , G02B27/1006 , G03F7/70641
Abstract: An overlay measurement device for measuring an error between a first overlay mark and a second overlay mark respectively formed on different layers formed on a wafer is proposed. The device includes a light source, a first beam splitter configured to split a beam emitted from the light source into two beams, a first color filter configured to adjust a center wavelength and a band width of one of the beams split by the first beam splitter so that the center wavelength and the band width of one of the beams become suitable for acquiring an image of the first overlay mark.
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公开(公告)号:US20240126182A1
公开(公告)日:2024-04-18
申请号:US18483918
申请日:2023-10-10
Applicant: CANON KABUSHIKI KAISHA
Inventor: JUN MOIZUMI
IPC: G03F7/00
CPC classification number: G03F7/70641 , G03F7/706845
Abstract: An apparatus includes a control unit configured to control an adjustment unit for adjusting imaging characteristics of an optical system. In a period spanning a plurality of lots, the control unit measures imaging characteristics of the optical system, and decides a prediction coefficient in a prediction formula to fit the prediction formula to measurement data obtained by the measurement in the period spanning the plurality of lots. The prediction formula is a polynomial function including a term representing a change in measurement value of the imaging characteristics caused by changing at least one of an illumination mode and an original between lots. The control unit decides the term of the polynomial function such that a fitting residual falls within an allowable range.
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公开(公告)号:US11960214B1
公开(公告)日:2024-04-16
申请号:US18142886
申请日:2023-05-03
Applicant: AUROS TECHNOLOGY, INC.
Inventor: Sol-Lee Hwang , Dong-Won Jung , Hee-Chul Lim , Hyun-Kyoo Shon , Min-Ho Lee
IPC: G03F7/00
CPC classification number: G03F7/70641 , G03F7/70625 , G03F7/70633
Abstract: There are provided a computer-readable storage medium and an overlay measurement device therefor that records a data structure for storing data controlling an operation of an overlay measurement device. In a computer-readable storage medium that records a data structure for storing data controlling an operation of an overlay measurement device in one embodiment, the data includes information of a recipe that is input to allow the overlay measurement device to measure characteristics of a wafer through a manager program installed in a user terminal, and unique information of the overlay measurement device.
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5.
公开(公告)号:US20240061353A1
公开(公告)日:2024-02-22
申请号:US18270988
申请日:2021-12-24
Applicant: ASML NETHERLANDS B.V.
Inventor: Simon Hendrik Celine VAN GORP , Stephan VAN REENEN
CPC classification number: G03F9/7026 , G03F7/70641 , G03F7/706845 , G03F9/7092
Abstract: A method for determining a focus actuation profile for one or more actuators of a lithographic exposure apparatus in control of a lithographic exposure process for exposure of an exposure area including at least two topographical levels. The method includes determining a continuous single focus actuation profile for the at least two topographical levels from an objective function including a per-level component operable to optimize a focus metric per topographical level for each of the at least two topographical levels.
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6.
公开(公告)号:US11880141B2
公开(公告)日:2024-01-23
申请号:US17673131
申请日:2022-02-16
Applicant: KLA CORPORATION
Inventor: Daria Negri , Amnon Manassen , Gilad Laredo
CPC classification number: G03F7/70633 , G03F7/70641 , G03F7/70683 , G06T7/0004 , G06T2207/30148
Abstract: A method of measuring misregistration in the manufacture of semiconductor device wafers including providing a multilayered semiconductor device wafer including at least a first layer and a second layer including at least one misregistration measurement target including a first periodic structure formed together with the first layer having a first pitch and a second periodic structure formed together with the second layer having a second pitch, imaging the first layer and the second layer at a depth of focus and using light having at least one first wavelength that causes images of both the first layer and the second layer to appear in at least one plane within the depth of focus and quantifying offset in the at least one plane between the images of the first layer and the second layer, thereby to calculate misregistration of the first layer and the second layer.
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公开(公告)号:US11733615B2
公开(公告)日:2023-08-22
申请号:US17420388
申请日:2019-12-05
Applicant: ASML Netherlands B.V.
Inventor: Frank Staals , Christoph Rene Konrad Cebulla Hennerkes
CPC classification number: G03F7/70641
Abstract: Disclosed is a method for selecting a structure for focus monitoring. The method comprises: simulating a Bossung response with focus of a focus dependent parameter, for one or more different structures; and selecting a structure for focus monitoring in a manufacturing process based on the results of said simulating step. The simulating step may be performed using a computational lithography simulation.
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公开(公告)号:US20230185205A1
公开(公告)日:2023-06-15
申请号:US18062072
申请日:2022-12-06
Applicant: CANON KABUSHIKI KAISHA
Inventor: KAZUKI OTA , TAKAFUMI MIYAHARU , YUKI SAITO , MASAKI IMAI
IPC: G03F7/20
CPC classification number: G03F7/70725 , G03F7/70775 , G03F7/70641
Abstract: An exposure apparatus including an obtainment unit configured to obtain, for each of a plurality of exposure regions on a substrate, surface positions in a height direction in the exposure region, and a control unit configured to control, based on the obtained surface positions, driving of a substrate stage in the height direction, wherein the control unit obtains an approximate surface approximately representing a cross-sectional shape of a surface of the exposure region from the obtained surface positions obtained, and for a first exposure region for which information related to the approximate surface does not exceed a predetermined range, controls the driving based on a correction value related to the driving obtained from an approximate surface approximately representing a cross-sectional shape of a surface of the exposure region that has been exposed prior to the first exposure region.
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9.
公开(公告)号:US20190250522A1
公开(公告)日:2019-08-15
申请号:US16397678
申请日:2019-04-29
Inventor: Jui-Ching WU , Jeng-Horng CHEN , Chia-Chen CHEN , Shu-Hao CHANG , Shang-Chieh CHIEN , Ming-Chin CHIEN , Anthony YEN
CPC classification number: G03F7/70641 , G03F7/70133 , G03F7/70141 , G03F7/7085 , G03F7/70991 , G03F9/7026 , G03F9/7061
Abstract: Systems and methods that include providing for measuring a first topographical height of a substrate at a first coordinate on the substrate and measuring a second topographical height of the substrate at a second coordinate on the substrate are provided. The measured first and second topographical heights may be provided as a wafer map. An exposure process is then performed on the substrate using the wafer map. The exposure process can include using a first focal point when exposing the first coordinate on the substrate and using a second focal plane when exposing the second coordinate on the substrate. The first focal point is determined using the first topographical height and the second focal point is determined using the second topographical height.
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公开(公告)号:US20190079421A1
公开(公告)日:2019-03-14
申请号:US15907482
申请日:2018-02-28
Applicant: Toshiba Memory Corporation
Inventor: Takuya MIZUTANI
IPC: G03F9/00 , H01L21/68 , H01L21/027 , G03F7/20
CPC classification number: G03F9/7026 , G03F7/2002 , G03F7/70525 , G03F7/70641 , G03F9/7034 , H01L21/0274 , H01L21/681
Abstract: According to one embodiment, an exposure apparatus performs exposure to transcribe a circuit pattern onto each of a plurality of sections on a wafer. The exposure apparatus includes a measurement device and a control device. The control device sets, on each of a first section and a second section adjacent to each other among the plurality of sections, a measurement point at a position offset from a reference position of each section. The control device causes the measurement device to measure surface information at each measurement point. The control device executes focus leveling control for exposure on the basis of the surface information measured at each measurement point.
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