公开(公告)号：US10453747B2

公开(公告)日：2019-10-22

申请号：US15687591

申请日：2017-08-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Aditya Kumar ,  Shiv Kumar Mishra ,  Jean-Baptiste Jacques Laloë ,  Wen Zhi Gao

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L23/535

Abstract: Methods of forming a contact for a semiconductor device with double barrier layer sets, and a device so formed are disclosed. Methods may include: depositing a first metal layer contacting a semiconductor substrate in a contact opening; depositing a first nitride barrier layer on the first metal layer; and annealing after depositing the first nitride barrier layer to form silicide region in a junction area underlying the contact opening with the first metal layer and the semiconductor substrate. After the annealing, a second metal layer may be deposited, followed by a second nitride barrier layer. A conductor is formed in a remaining portion of the contact opening. The double barrier layer sets prevent the formation of volcano defects and also advantageously reduce contact resistance.

公开(公告)号：US20190067098A1

公开(公告)日：2019-02-28

申请号：US15687591

申请日：2017-08-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Aditya Kumar ,  Shiv Kumar Mishra ,  Jean-Baptiste Jacques Laloë ,  Wen Zhi Gao

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L23/535

Abstract: Methods of forming a contact for a semiconductor device with double barrier layer sets, and a device so formed are disclosed. Methods may include: depositing a first metal layer contacting a semiconductor substrate in a contact opening; depositing a first nitride barrier layer on the first metal layer; and annealing after depositing the first nitride barrier layer to form silicide region in a junction area underlying the contact opening with the first metal layer and the semiconductor substrate. After the annealing, a second metal layer may be deposited, followed by a second nitride barrier layer. A conductor is formed in a remaining portion of the contact opening. The double barrier layer sets prevent the formation of volcano defects and also advantageously reduce contact resistance.