公开(公告)号：US20200152512A1

公开(公告)日：2020-05-14

申请号：US16185015

申请日：2018-11-09

Applicant: GLOBALFOUNDRIES INC.

Inventor： Andre P. Labonte ,  Catherine B Labelle ,  Chanro Park

IPC: H01L21/768 ,  H01L23/528 ,  H01L21/311

Abstract: A method of fabricating an interconnect structure of a semiconductor device is provided having a first conductive line and forming a second conductive line over the first conductive line. A via opening is formed in the second conductive line, and the via opening is aligned over the first conductive line. The via opening is filled with a conductive material to form an interconnect via and an upper portion of the interconnect via forms a portion of the second conductive line.