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公开(公告)号：US10217633B2
公开(公告)日：2019-02-26
申请号：US15456757
申请日：2017-03-13
Applicant: GLOBALFOUNDRIES INC.
Inventor： Heng Yang , Ahmed Hassan , Daniel Dechene
IPC: H01L21/76 , H01L21/033 , H01L21/768
Abstract: A single critical mask process flow and associated structure eliminate the formation of narrow polysilicon defects at the ends of polysilicon gate arrays, and obviate the need to implement complicated ground rules and post-design fill methods to avoid generation of the defects.
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