公开(公告)号：US20190206729A1

公开(公告)日：2019-07-04

申请号：US15860318

申请日：2018-01-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qiang FANG ,  Shafaat AHMED ,  Zhiguo SUN ,  Jiehui SHU ,  Dinesh R. KOLI ,  Wei-Tsu TSENG

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76844 ,  H01L21/76807 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cobalt plated via integration scheme and methods of manufacture. The structure includes: a via structure composed of cobalt material; and a wiring structure above the via structure. The wiring structure is lined with a barrier liner and the cobalt material and filled with conductive material.