公开(公告)号：US20160086952A1

公开(公告)日：2016-03-24

申请号：US14961566

申请日：2015-12-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： HONG YU ,  HYUCKSOO YANG ,  RICHARD J. CARTER

IPC: H01L27/092 ,  H01L29/167 ,  H01L29/161 ,  H01L21/8238 ,  H01L29/417

CPC classification number: H01L27/0924 ,  H01L21/76224 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0886 ,  H01L29/161 ,  H01L29/167 ,  H01L29/41783 ,  H01L29/66795

Abstract: Approaches for forming an oxide cap to protect a semiconductor device (e.g., a fin field effect transistor device (FinFET)) are provided. Specifically, approaches are provided for forming an oxide cap over a subset (e.g., SiP regions) of raised source drain (RSD) structures on the set of fins of the FinFET device to mitigate damage during subsequent processing. The oxide spacer is deposited before the removal of a nitride capping layer from the FinFET device (e.g., by a hot phosphorus wash). The oxide cap on top of the RSD structures will be preserved throughout the removal of the nitride capping layer to provide hardmask protection during this process.