公开(公告)号：US09385179B2

公开(公告)日：2016-07-05

申请号：US13765105

申请日：2013-02-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： James S. Nakos ,  Edmund J. Sprogis ,  Anthony K. Stamper

IPC: H01L27/108 ,  H01L29/94 ,  H01L49/02 ,  H01L29/66

CPC classification number: H01L28/40 ,  H01L29/66181 ,  H01L29/945

Abstract: Solutions for forming a silicided deep trench decoupling capacitor are disclosed. In one aspect, a method of forming a semiconductor device includes: forming an outer trench in a silicon substrate, the forming exposing portions of the silicon substrate below an upper surface of the silicon substrate; depositing a dielectric liner layer inside the trench; depositing a doped polysilicon layer over the dielectric liner layer, the doped polysilicon layer forming an inner trench in the silicon substrate; forming a silicide layer over a portion of the doped polysilicon layer; forming an intermediate contact layer within the inner trench; and forming a contact over a portion of the intermediate contact layer and a portion of the silicide layer.

Abstract translation: 公开了用于形成硅化深沟槽去耦电容器的解决方案。 一方面，一种形成半导体器件的方法包括：在硅衬底中形成外部沟槽，所述硅衬底的所述成形暴露部分位于所述硅衬底的上表面下方; 在沟槽内沉积介电衬垫层; 在所述介​​质衬底层上沉积掺杂多晶硅层，所述掺杂多晶硅层在所述硅衬底中形成内部沟槽; 在所述掺杂多晶硅层的一部分上形成硅化物层; 在所述内沟槽内形成中间接触层; 以及在所述中间接触层的一部分和所述硅化物层的一部分上形成接触。