公开(公告)号：US20140327139A1

公开(公告)日：2014-11-06

申请号：US13875377

申请日：2013-05-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jialin YU ,  Jilin XIA ,  Huang LIU ,  Wonwoo KIM ,  Changyong XIAO

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L23/5226 ,  H01L21/76846 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Contact structures and methods of fabricating contact structures of semiconductor devices are provided. One method includes, for instance: obtaining a substrate including a dielectric layer over the substrate; patterning the dielectric layer with at least one contact opening; providing a contact liner within the at least one contact opening in the dielectric layer; and filling the contact liner with a conductive material. In enhanced aspects, providing the contact liner within the at least one contact opening includes: depositing a first layer within the at least one contact opening in the dielectric layer; depositing a second layer over the first layer within the at least one contact opening; depositing at least one intermediate layer over the second layer within the at least one contact opening; and depositing a top layer over the at least one intermediate layer within the at least one contact opening.

Abstract translation: 提供了制造半导体器件的接触结构的接触结构和方法。 一种方法包括例如：在衬底上获得包括电介质层的衬底; 用至少一个接触开口构图介电层; 在所述电介质层中的所述至少一个接触开口内提供接触衬垫; 并用导电材料填充接触衬垫。 在增强的方面，在所述至少一个接触开口内提供所述接触衬垫包括：在所述电介质层中的所述至少一个接触开口内沉积第一层; 在所述至少一个接触开口内的第一层上沉积第二层; 在所述至少一个接触开口内沉积所述第二层上的至少一个中间层; 以及在所述至少一个接触开口内的所述至少一个中间层上沉积顶层。