公开(公告)号：US20170358691A1

公开(公告)日：2017-12-14

申请号：US15181834

申请日：2016-06-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Kai Xiu ,  Chengwen Pei ,  Pinping Sun

IPC: H01L29/93 ,  H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H03L7/093 ,  H03L7/099

Abstract: Various particular embodiments include a semiconductor varactor structure including: a semiconductor substrate of a first conductivity type; a semiconductor area of a second conductivity type, different from the first conductivity type, within the semiconductor substrate; a field effect transistor (FET) structure within the semiconductor area; and a contact, contacting the semiconductor area, for applying a voltage bias to the semiconductor area.